Core excitons in silicon and silicon oxides

Using a newly developed reflectometer we have measured the reflectivity at the silicon K edge for different silicon compounds. Combining these measurements with silicon L edge reflectivity measurements carried out on a different reflectometer we determined the binding energy of core excitons at the...

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Bibliographic Details
Published in:Review of Scientific Instruments 1995-02, Vol.66 (2), p.1480-1482
Main Authors: Dorssen, G. E. van, Roper, M. D., Padmore, H. A., Smith, A. D., Greaves, G. N.
Format: Article
Language:English
Subjects:
BINDING ENERGY
BREMSSTRAHLUNG
CHALCOGENIDES
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
ELEMENTS
ENERGY
EXCITONS
MATERIALS SCIENCE
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
QUASI PARTICLES
RADIATIONS
REFLECTIVITY
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SURFACE PROPERTIES 360606 > Other Materials-- Physical Properties-- (1992-)
SYNCHROTRON RADIATION
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Summary:Using a newly developed reflectometer we have measured the reflectivity at the silicon K edge for different silicon compounds. Combining these measurements with silicon L edge reflectivity measurements carried out on a different reflectometer we determined the binding energy of core excitons at the L edge. The results show that it is possible to carry out reflectivity measurements with the resolution necessary for the determination of the exciton parameters. Comparison with literature values shows that a rigid Kramers–Kronig analysis is not needed when the angle of incidence is well below the critical angle of total external reflection.
ISSN:0034-6748
1089-7623
DOI:10.1063/1.1146471