Negative dispersion parameter of hydrogen diffusion in hydrogenated amorphous silicon

The time-dependent diffusion constant [ital D][sub [ital H]]([ital t])=[ital D][sub 00]([omega][ital t])[sup [minus][alpha]] of hydrogen in rf sputter-deposited hydrogenated amorphous Si ([ital a]-Si:H) films containing [ital C][sub [ital H]]=3--5 at. % Si-bonded H was observed to increase with the...

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Bibliographic Details
Published in:Physical review. B, Condensed matter Condensed matter, 1993-04, Vol.47 (15), p.9361-9365
Main Authors: SHINAR, R, SHINAR, J, JIA, H, WU, X.-L
Format: Article
Language:English
Subjects:
AMORPHOUS STATE
CHEMICAL REACTIONS
Condensed matter: structure, mechanical and thermal properties
DIFFUSION
Diffusion in solids
ELEMENTS
Exact sciences and technology
HYDROGEN
HYDROGENATION
MATERIALS SCIENCE
NONMETALS
Physics
RELAXATION TIME
Self-diffusion and ionic conduction in nonmetals
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 360606 > Other Materials-- Physical Properties-- (1992-)
Transport properties of condensed matter (nonelectronic)
TRAPPING
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Summary:The time-dependent diffusion constant [ital D][sub [ital H]]([ital t])=[ital D][sub 00]([omega][ital t])[sup [minus][alpha]] of hydrogen in rf sputter-deposited hydrogenated amorphous Si ([ital a]-Si:H) films containing [ital C][sub [ital H]]=3--5 at. % Si-bonded H was observed to increase with the time [ital t] at 300[le][ital T][le]380 [degree]C, i.e., the dispersion parameter [alpha] was negative. As in previous studies, [alpha]([ital T]) generally decreases with [ital T] up to a sample-dependent temperature [ital T][sub [ital m]], and increases at higher temperatures. The observed behavior is discussed in relation to structural relaxation processes which affect the distribution of H trapping energies.
ISSN:0163-1829
1095-3795
DOI:10.1103/PhysRevB.47.9361