The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

Both doped and undoped homoepitaxial diamond films were fabricated using microwave plasma-enhanced chemical vapor deposition (CVD). The conductivity of the diamond film is strongly affected by the surface treatment. In particular, exposure of film surface to a hydrogen plasma results in the formatio...

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Bibliographic Details
Published in:IEEE electron device letters 1990-02, Vol.11 (2), p.100-102
Main Authors: Grot, S.A., Gildenblat, G.S., Hatfield, C.W., Wronski, C.R., Badzian, A.R., Badzian, T., Messier, R.
Format: Article
Language:English
Subjects:
360601 > Other Materials-- Preparation & Manufacture
656003 > Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
656100 > Condensed Matter Physics-- Superconductivity
ALLOYS
Applied sciences
BORON ADDITIONS
BORON ALLOYS
CARBON
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
Cleaning
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Conductive films
Conductivity
CRYSTAL DOPING
DEPOSITION
DIAMONDS
Doping
ELECTRICAL PROPERTIES
Electronics
ELEMENTAL MINERALS
ELEMENTS
Exact sciences and technology
FABRICATION
GOLD
HYDROGEN
INTERFACES
MATERIALS SCIENCE
METALS
MINERALS
NONMETALS
PHYSICAL PROPERTIES
PLASMA
Plasma chemistry
Plasma properties
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SOLID-STATE PLASMA
SURFACE COATING
Surface treatment
THIN FILMS
TRANSITION ELEMENTS 360603 > Materials-- Properties
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Description
Summary:Both doped and undoped homoepitaxial diamond films were fabricated using microwave plasma-enhanced chemical vapor deposition (CVD). The conductivity of the diamond film is strongly affected by the surface treatment. In particular, exposure of film surface to a hydrogen plasma results in the formation of a conductive layer which can be used to obtain linear (ohmic) I-V characteristics of the Au/diamond contacts, regardless of the doping level. It is shown how the proper chemical cleaning of the boron-doped homoepitaxial diamond surface allows the fabrication of Au-gate Schottky diodes with excellent rectifying characteristics at temperatures of at least 400 degrees C.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.46942