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Limitations on the use of ion implantation for the study of the reactive element effect in [beta]-NiAl
Numerous investigations have used the ion implantation of reactive elements (RE) such as Y or Ce, to study their effect on the growth of external oxide scales on alloys. Ion implantation has, nevertheless, some specific limitations, especially in Al[sub 2]O[sub 3]-forming alloys. The most notable li...
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Published in: | Journal of the Electrochemical Society 1994-09, Vol.141:9 |
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description | Numerous investigations have used the ion implantation of reactive elements (RE) such as Y or Ce, to study their effect on the growth of external oxide scales on alloys. Ion implantation has, nevertheless, some specific limitations, especially in Al[sub 2]O[sub 3]-forming alloys. The most notable limitation occurs at temperatures > 1,000 C where, owing to the shallowness of implantation, any effects of the ion-implanted RE are short-lived and differ significantly from those observed for an RE alloy addition or an RE oxide dispersion. Additionally, in alumina-forming alloy systems, particularly [beta]-NiAl, implanted Y stabilizes the first-forming, metastable [theta]-Al[sub 2]O[sub 3]. The retention of the [theta]-Al[sub 2]O[sub 3] scale on Y-implanted substrates is a chemical effect of the high concentration of Y near the substrate surface and is not a result of the implantation process itself. The loss of the RE effect at high temperatures and long times for implanted alloys is related to the outward diffusion of the RE and the information of RE-rich oxides near the gas interface of the scale. |
doi_str_mv | 10.1149/1.2055140 |
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fullrecord | <record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_6841855</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>6841855</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_68418553</originalsourceid><addsrcrecordid>eNqNi81qAjEUhYMoOP4s-gaX7sfm1kTHpZQWF9KVO5EhjTd4y0wi5lro23ds-wCuDt_5zlHqAfUM0ayecPasrUWje6rAlbHlEhH7qtAa56VZWByqUc6fHWJlloUKW25ZnHCKGVIEORFcM0EK0FXA7blx8c9DSJdfn-V6_L4tbnAh54W_CKihlqIAhUBegCPsP0jcoXzndTNRg-CaTNP_HKvHt9fdy6ZMWbjOnoX8yacYu2u9qAxW1s7vGv0AS3dLPQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Limitations on the use of ion implantation for the study of the reactive element effect in [beta]-NiAl</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Pint, B.A. ; Hobbs, L.W.</creator><creatorcontrib>Pint, B.A. ; Hobbs, L.W.</creatorcontrib><description>Numerous investigations have used the ion implantation of reactive elements (RE) such as Y or Ce, to study their effect on the growth of external oxide scales on alloys. Ion implantation has, nevertheless, some specific limitations, especially in Al[sub 2]O[sub 3]-forming alloys. The most notable limitation occurs at temperatures > 1,000 C where, owing to the shallowness of implantation, any effects of the ion-implanted RE are short-lived and differ significantly from those observed for an RE alloy addition or an RE oxide dispersion. Additionally, in alumina-forming alloy systems, particularly [beta]-NiAl, implanted Y stabilizes the first-forming, metastable [theta]-Al[sub 2]O[sub 3]. The retention of the [theta]-Al[sub 2]O[sub 3] scale on Y-implanted substrates is a chemical effect of the high concentration of Y near the substrate surface and is not a result of the implantation process itself. The loss of the RE effect at high temperatures and long times for implanted alloys is related to the outward diffusion of the RE and the information of RE-rich oxides near the gas interface of the scale.</description><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.2055140</identifier><language>eng</language><publisher>United States</publisher><subject>360105 -- Metals & Alloys-- Corrosion & Erosion ; ALLOYS ; ALUMINIUM ALLOYS ; ALUMINIUM COMPOUNDS ; ALUMINIUM OXIDES ; CERIUM ; CHALCOGENIDES ; COATINGS ; DATA ; ELEMENTS ; EXPERIMENTAL DATA ; INFORMATION ; INTERMETALLIC COMPOUNDS ; ION IMPLANTATION ; MATERIALS SCIENCE ; METALS ; NICKEL ALLOYS ; NUMERICAL DATA ; OXIDES ; OXYGEN COMPOUNDS ; PASSIVATION ; PROTECTIVE COATINGS ; RARE EARTHS ; STABILITY ; TRANSITION ELEMENTS 360106 -- Metals & Alloys-- Radiation Effects ; YTTRIUM</subject><ispartof>Journal of the Electrochemical Society, 1994-09, Vol.141:9</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,777,781,882,27905,27906</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/6841855$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Pint, B.A.</creatorcontrib><creatorcontrib>Hobbs, L.W.</creatorcontrib><title>Limitations on the use of ion implantation for the study of the reactive element effect in [beta]-NiAl</title><title>Journal of the Electrochemical Society</title><description>Numerous investigations have used the ion implantation of reactive elements (RE) such as Y or Ce, to study their effect on the growth of external oxide scales on alloys. Ion implantation has, nevertheless, some specific limitations, especially in Al[sub 2]O[sub 3]-forming alloys. The most notable limitation occurs at temperatures > 1,000 C where, owing to the shallowness of implantation, any effects of the ion-implanted RE are short-lived and differ significantly from those observed for an RE alloy addition or an RE oxide dispersion. Additionally, in alumina-forming alloy systems, particularly [beta]-NiAl, implanted Y stabilizes the first-forming, metastable [theta]-Al[sub 2]O[sub 3]. The retention of the [theta]-Al[sub 2]O[sub 3] scale on Y-implanted substrates is a chemical effect of the high concentration of Y near the substrate surface and is not a result of the implantation process itself. The loss of the RE effect at high temperatures and long times for implanted alloys is related to the outward diffusion of the RE and the information of RE-rich oxides near the gas interface of the scale.</description><subject>360105 -- Metals & Alloys-- Corrosion & Erosion</subject><subject>ALLOYS</subject><subject>ALUMINIUM ALLOYS</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>ALUMINIUM OXIDES</subject><subject>CERIUM</subject><subject>CHALCOGENIDES</subject><subject>COATINGS</subject><subject>DATA</subject><subject>ELEMENTS</subject><subject>EXPERIMENTAL DATA</subject><subject>INFORMATION</subject><subject>INTERMETALLIC COMPOUNDS</subject><subject>ION IMPLANTATION</subject><subject>MATERIALS SCIENCE</subject><subject>METALS</subject><subject>NICKEL ALLOYS</subject><subject>NUMERICAL DATA</subject><subject>OXIDES</subject><subject>OXYGEN COMPOUNDS</subject><subject>PASSIVATION</subject><subject>PROTECTIVE COATINGS</subject><subject>RARE EARTHS</subject><subject>STABILITY</subject><subject>TRANSITION ELEMENTS 360106 -- Metals & Alloys-- Radiation Effects</subject><subject>YTTRIUM</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqNi81qAjEUhYMoOP4s-gaX7sfm1kTHpZQWF9KVO5EhjTd4y0wi5lro23ds-wCuDt_5zlHqAfUM0ayecPasrUWje6rAlbHlEhH7qtAa56VZWByqUc6fHWJlloUKW25ZnHCKGVIEORFcM0EK0FXA7blx8c9DSJdfn-V6_L4tbnAh54W_CKihlqIAhUBegCPsP0jcoXzndTNRg-CaTNP_HKvHt9fdy6ZMWbjOnoX8yacYu2u9qAxW1s7vGv0AS3dLPQ</recordid><startdate>19940901</startdate><enddate>19940901</enddate><creator>Pint, B.A.</creator><creator>Hobbs, L.W.</creator><scope>OTOTI</scope></search><sort><creationdate>19940901</creationdate><title>Limitations on the use of ion implantation for the study of the reactive element effect in [beta]-NiAl</title><author>Pint, B.A. ; Hobbs, L.W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_68418553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>360105 -- Metals & Alloys-- Corrosion & Erosion</topic><topic>ALLOYS</topic><topic>ALUMINIUM ALLOYS</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>ALUMINIUM OXIDES</topic><topic>CERIUM</topic><topic>CHALCOGENIDES</topic><topic>COATINGS</topic><topic>DATA</topic><topic>ELEMENTS</topic><topic>EXPERIMENTAL DATA</topic><topic>INFORMATION</topic><topic>INTERMETALLIC COMPOUNDS</topic><topic>ION IMPLANTATION</topic><topic>MATERIALS SCIENCE</topic><topic>METALS</topic><topic>NICKEL ALLOYS</topic><topic>NUMERICAL DATA</topic><topic>OXIDES</topic><topic>OXYGEN COMPOUNDS</topic><topic>PASSIVATION</topic><topic>PROTECTIVE COATINGS</topic><topic>RARE EARTHS</topic><topic>STABILITY</topic><topic>TRANSITION ELEMENTS 360106 -- Metals & Alloys-- Radiation Effects</topic><topic>YTTRIUM</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pint, B.A.</creatorcontrib><creatorcontrib>Hobbs, L.W.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pint, B.A.</au><au>Hobbs, L.W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Limitations on the use of ion implantation for the study of the reactive element effect in [beta]-NiAl</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1994-09-01</date><risdate>1994</risdate><volume>141:9</volume><issn>0013-4651</issn><eissn>1945-7111</eissn><abstract>Numerous investigations have used the ion implantation of reactive elements (RE) such as Y or Ce, to study their effect on the growth of external oxide scales on alloys. Ion implantation has, nevertheless, some specific limitations, especially in Al[sub 2]O[sub 3]-forming alloys. The most notable limitation occurs at temperatures > 1,000 C where, owing to the shallowness of implantation, any effects of the ion-implanted RE are short-lived and differ significantly from those observed for an RE alloy addition or an RE oxide dispersion. Additionally, in alumina-forming alloy systems, particularly [beta]-NiAl, implanted Y stabilizes the first-forming, metastable [theta]-Al[sub 2]O[sub 3]. The retention of the [theta]-Al[sub 2]O[sub 3] scale on Y-implanted substrates is a chemical effect of the high concentration of Y near the substrate surface and is not a result of the implantation process itself. The loss of the RE effect at high temperatures and long times for implanted alloys is related to the outward diffusion of the RE and the information of RE-rich oxides near the gas interface of the scale.</abstract><cop>United States</cop><doi>10.1149/1.2055140</doi></addata></record> |
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subjects | 360105 -- Metals & Alloys-- Corrosion & Erosion ALLOYS ALUMINIUM ALLOYS ALUMINIUM COMPOUNDS ALUMINIUM OXIDES CERIUM CHALCOGENIDES COATINGS DATA ELEMENTS EXPERIMENTAL DATA INFORMATION INTERMETALLIC COMPOUNDS ION IMPLANTATION MATERIALS SCIENCE METALS NICKEL ALLOYS NUMERICAL DATA OXIDES OXYGEN COMPOUNDS PASSIVATION PROTECTIVE COATINGS RARE EARTHS STABILITY TRANSITION ELEMENTS 360106 -- Metals & Alloys-- Radiation Effects YTTRIUM |
title | Limitations on the use of ion implantation for the study of the reactive element effect in [beta]-NiAl |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T21%3A38%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-osti&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Limitations%20on%20the%20use%20of%20ion%20implantation%20for%20the%20study%20of%20the%20reactive%20element%20effect%20in%20%5Bbeta%5D-NiAl&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=Pint,%20B.A.&rft.date=1994-09-01&rft.volume=141:9&rft.issn=0013-4651&rft.eissn=1945-7111&rft_id=info:doi/10.1149/1.2055140&rft_dat=%3Costi%3E6841855%3C/osti%3E%3Cgrp_id%3Ecdi_FETCH-osti_scitechconnect_68418553%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |