Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs

Deep level transient spectroscopy (DLTS) and cathodoluminescence (CL) were used to study the hydrogen passivation of misfit dislocations in In0.06Ga0.94As/GaAs heterostructures. The CL observations indicate that hydrogen plasma exposure passivates most, but not all, of the dark line defects existing...

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Bibliographic Details
Published in:Applied physics letters 1993-03, Vol.62 (12), p.1417-1419
Main Authors: MATRAGRANO, M. J, WATSON, G. P, AST, D. G, ANDERSON, T. J, PATHANGEY, B
Format: Article
Language:English
Subjects:
ALLOY SYSTEMS
ARSENIC COMPOUNDS
ARSENIDES
CATHODOLUMINESCENCE
CHEMICAL REACTIONS
Condensed matter: electronic structure, electrical, magnetic, and optical properties
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEEP LEVEL TRANSIENT SPECTROSCOPY
DISLOCATIONS
Electron states
ELECTRONIC STRUCTURE
EPITAXY
Exact sciences and technology
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HYDROGENATION
Impurity and defect levels
INDIUM ARSENIDES
INDIUM COMPOUNDS
LINE DEFECTS
LUMINESCENCE
MATERIALS SCIENCE
PASSIVATION
Physics
PNICTIDES
SPECTROSCOPY 360606 > Other Materials-- Physical Properties-- (1992-)
TERNARY ALLOY SYSTEMS
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Summary:Deep level transient spectroscopy (DLTS) and cathodoluminescence (CL) were used to study the hydrogen passivation of misfit dislocations in In0.06Ga0.94As/GaAs heterostructures. The CL observations indicate that hydrogen plasma exposure passivates most, but not all, of the dark line defects existing in the specimen prior to hydrogenation. The concentration of deep level defect states that cannot be passivated is below the detection limit of the DLTS instrument (approximately 4×1012 cm−3). We find the passivation is stable after anneals at temperatures as high as 600 °C, indicating that hydrogen passivation of misfit dislocations is at least as stable as that of the isolated point defect studied previously with DLTS [W. C. Dautremont-Smith, J. C. Nabity, V. Swaminathan, M. Stavola, J. Chevalier, C. W. Tu, and S. J. Pearton, Appl. Phys. Lett. 49 1098 (1986)].
ISSN:0003-6951
1077-3118
DOI:10.1063/1.108697