Practical approach to determining charge collected in multi-junction structures due to the ion shunt effect

This paper will present the algorithms and results of a computer program used to determine the charge collected on silicon semiconductor transistors due to the ion shunt effect. The program is unique because it is quick and simple to use and because it uses a general algorithm to determine an accura...

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Bibliographic Details
Published in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1993-12, Vol.40 (6), p.1918-1925
Main Authors: BROWN, A. O, BHARAT BHUVA, KERNS, S. E, STAPOR, W. J
Format: Article
Language:English
Subjects:
Applied sciences
CHARGE COLLECTION
CHARGED PARTICLES
Compound structure devices
DATA
DESIGN
Electronics
Exact sciences and technology
HEAVY IONS
INFORMATION
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
IONS
MATHEMATICAL MODELS
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES 440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
THEORETICAL DATA
TRANSISTORS
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Summary:This paper will present the algorithms and results of a computer program used to determine the charge collected on silicon semiconductor transistors due to the ion shunt effect. The program is unique because it is quick and simple to use and because it uses a general algorithm to determine an accurate initial electron-hole pair distribution in the ion track.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.273463