Noise in a-Si:H p-i-n detector diodes

Noise of a-Si:H p-i-n diodes (5 approximately 50 mu m thick) under reverse bias was investigated. The current-dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and the metallic contacts was the domina...

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Bibliographic Details
Published in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1992-08, Vol.39 (4), p.641-644
Main Authors: Cho, G., Qureshi, S., Drewery, J.S., Jing, T., Kaplan, S.N., Lee, H., Mireshghi, A., Perez-Mendez, V., Wildermuth, D.
Format: Article
Language:English
Subjects:
440100 > Radiation Instrumentation
ANNEALING
Background noise
ELEMENTS
Exact sciences and technology
HEAT TREATMENTS
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
JUNCTIONS
MATERIALS SCIENCE
MEASURING INSTRUMENTS
Noise measurement
Noise shaping
Other topics in instruments, apparatus, components and techniques common to several branches of physics and astronomy
P-i-n diodes
P-N JUNCTIONS
Physics
PIN photodiodes
Pulse amplifiers
Pulse measurements
Pulse shaping methods
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS 360601 > Other Materials-- Preparation & Manufacture
SI SEMICONDUCTOR DETECTORS
SILICON
Thermal resistance
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Summary:Noise of a-Si:H p-i-n diodes (5 approximately 50 mu m thick) under reverse bias was investigated. The current-dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and the metallic contacts was the dominant noise source which was unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor of two, approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seemed to be a shaping time-independent noise component at zero biased diodes.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.159679