Noise in a-Si:H p-i-n detector diodes

• Published in: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1992-08, Vol.39 (4), p.641-644
• Main Authors: Cho, G., Qureshi, S., Drewery, J.S., Jing, T., Kaplan, S.N., Lee, H., Mireshghi, A., Perez-Mendez, V., Wildermuth, D.
• Format: Article
• Language: English
• Subjects: 440100 > Radiation Instrumentation; ANNEALING; Background noise; ELEMENTS; Exact sciences and technology; HEAT TREATMENTS; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; JUNCTIONS; MATERIALS SCIENCE; MEASURING INSTRUMENTS; Noise measurement; Noise shaping; Other topics in instruments, apparatus, components and techniques common to several branches of physics and astronomy; P-i-n diodes; P-N JUNCTIONS; Physics; PIN photodiodes; Pulse amplifiers; Pulse measurements; Pulse shaping methods; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS 360601 > Other Materials-- Preparation & Manufacture; SI SEMICONDUCTOR DETECTORS; SILICON; Thermal resistance
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/23.159679

Noise of a-Si:H p-i-n diodes (5 approximately 50 mu m thick) under reverse bias was investigated. The current-dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and the metallic contacts was the dominant noise source which was unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor of two, approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seemed to be a shaping time-independent noise component at zero biased diodes.< >