Low-temperature atmospheric pressure chemical vapor deposition of titanium disulfide films

A new atmospheric vapor deposition process for TiS[sub 2] films was developed; it relies upon the reaction of Ti tetrachloride with organothiols at temperatures as low as 200[degree]C, yielding TiS[sub 2] coatings with crystallographic orientation well suited for use as cathodes in Li batteries. The...

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Bibliographic Details
Published in:Chemistry of materials 1992-11, Vol.4 (6), p.1144-1146
Main Authors: Winter, Charles H, Lewkebandara, T. Suren, Proscia, James W
Format: Article
Language:English
Subjects:
360606 > Other Materials-- Physical Properties-- (1992-)
ADHESION
BULK DENSITY
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
Condensed matter: structure, mechanical and thermal properties
DENSITY
DEPOSITION
DIFFRACTION
ELASTIC SCATTERING
Exact sciences and technology
MATERIALS SCIENCE
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
Physics
REFLECTIVITY
RUTHERFORD SCATTERING
SCATTERING
Solid surfaces and solid-solid interfaces
SULFIDES
SULFUR COMPOUNDS
Surface and interface dynamics and vibrations
SURFACE COATING
SURFACE PROPERTIES
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
TITANIUM COMPOUNDS
TITANIUM SULFIDES
TRANSITION ELEMENT COMPOUNDS 360601 > Other Materials-- Preparation & Manufacture
X-RAY DIFFRACTION
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Description
Summary:A new atmospheric vapor deposition process for TiS[sub 2] films was developed; it relies upon the reaction of Ti tetrachloride with organothiols at temperatures as low as 200[degree]C, yielding TiS[sub 2] coatings with crystallographic orientation well suited for use as cathodes in Li batteries. The adhesion, surface finish and density of these films are superior to those obtained using H[sub 2] as the source of S. The material has a low C content, implying an efficient carbon-sulfur cleavage. The reflectivity of the films is consistently high. At 300[degree]C the density of the film is 2.81 g/cm[sup 3], or 87% of the bulk density of TiS[sup 2].
ISSN:0897-4756
1520-5002
DOI:10.1021/cm00024a007