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Low resistance wavelength-reproducible [ital p]-type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxy

We report the reproducible molecular beam epitaxial growth of Be-doped piecewise linearly graded (Al,Ga)As distributed Bragg reflectors that have vertical series resistivities near bulk values. For mirrors with three linear segments per interface, the center wavelength reproducibility is 0.1% and th...

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Bibliographic Details
Published in:Applied physics letters 1993-04, Vol.62:14
Main Authors: Chalmers, S.A., Lear, K.L., Killeen, K.P.
Format: Article
Language:English
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Summary:We report the reproducible molecular beam epitaxial growth of Be-doped piecewise linearly graded (Al,Ga)As distributed Bragg reflectors that have vertical series resistivities near bulk values. For mirrors with three linear segments per interface, the center wavelength reproducibility is 0.1% and the series resistivity is as low as 1.8[times]10[sup [minus]5] [Omega] cm[sup 2] for hole concentrations of 5[times]10[sup 18] cm[sup [minus]3]. Measured reflectivities of 6.0% per interface are comparable to conventional single-linear-grade mirrors. Vertical-cavity surface-emitting lasers incorporating these mirrors exhibit record-low voltage thresholds of less than 1.5 V.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.109608