Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors

1/f noise magnitude of unirradiated MOS transistors correlates with radiation-induced hole trapping efficiency of the oxide. This suggests that the previously unidentified defect that causes 1/f noise in MOS transistors is linked to the radiation-induced hole trap, the E prime center, or to a direct...

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Bibliographic Details
Published in:Physical review letters 1990-01, Vol.64 (5), p.579-582
Main Authors: FLEETWOOD, D. M, SCOFIELD, J. H
Format: Article
Language:English
Subjects:
360104 - Metals & Alloys- Physical Properties
360603 - Materials- Properties
ANNEALING
CHALCOGENIDES
COLOR CENTERS
Condensed matter: electronic structure, electrical, magnetic, and optical properties
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DIMENSIONS
E CENTERS
EFFICIENCY
Electronic transport in condensed matter
ELEMENTS
ENERGY
EQUATIONS
Exact sciences and technology
EXPERIMENTAL DATA
FLUCTUATIONS
HEAT TREATMENTS
HOLES
INFORMATION
JUNCTIONS
MATERIALS SCIENCE
METALS
MINERALS
NONMETALS
NUMERICAL DATA
OXIDE MINERALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
Physics
POINT DEFECTS
PRECURSOR
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SILICA
SILICON COMPOUNDS
SILICON OXIDES
THICKNESS
THRESHOLD ENERGY
TRANSISTORS
TRAPPING
VACANCIES
VARIATIONS
VERY HIGH TEMPERATURE
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Description
Summary:1/f noise magnitude of unirradiated MOS transistors correlates with radiation-induced hole trapping efficiency of the oxide. This suggests that the previously unidentified defect that causes 1/f noise in MOS transistors is linked to the radiation-induced hole trap, the E prime center, or to a direct precursor in SiO sub 2 before irradiation. A simple equation relating the trapping efficiency of the oxide and the noise is derived.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.64.579