Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures

Strained GaAs/InGaAs/AlGaAs quantum well structures have been grown by molecular beam epitaxy at substrate temperatures from 375 to 510 °C. The well layer thickness and In composition are analyzed by ion channeling and particle-induced x-ray emission as a function of growth temperature. Test structu...

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Bibliographic Details
Published in:Applied physics letters 1990-05, Vol.56 (20), p.2022-2024
Main Authors: CHAN, K. T, LIGHTNER, M. J, PATTERSON, G. A, YU, K. M
Format: Article
Language:English
Subjects:
360602 - Other Materials- Structure & Phase Studies
360603 - Materials- Properties
426000 - Engineering- Components, Electron Devices & Circuits- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
Applied sciences
ARSENIC COMPOUNDS
ARSENIDES
CARRIER MOBILITY
Electronics
ENGINEERING
EPITAXY
Exact sciences and technology
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LUMINESCENCE
MATERIALS SCIENCE
MOBILITY
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
TRANSISTORS
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Summary:Strained GaAs/InGaAs/AlGaAs quantum well structures have been grown by molecular beam epitaxy at substrate temperatures from 375 to 510 °C. The well layer thickness and In composition are analyzed by ion channeling and particle-induced x-ray emission as a function of growth temperature. Test structures for modulation-doped field-effect transistors grown at 375 and 510 °C under two different As4 overpressures were also characterized by Van der Pauw measurements and low-temperature photoluminescence. The observed differences in film quality can be explained by the influence of substrate temperature and As4 flux on the cation surface mobility during growth of the InGaAs layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103005