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Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures

Strained GaAs/InGaAs/AlGaAs quantum well structures have been grown by molecular beam epitaxy at substrate temperatures from 375 to 510 °C. The well layer thickness and In composition are analyzed by ion channeling and particle-induced x-ray emission as a function of growth temperature. Test structu...

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Published in:	Applied physics letters 1990-05, Vol.56 (20), p.2022-2024
Main Authors:	CHAN, K. T, LIGHTNER, M. J, PATTERSON, G. A, YU, K. M
Format:	Article
Language:	English
Subjects:	360602 - Other Materials- Structure & Phase Studies 360603 - Materials- Properties 426000 - Engineering- Components, Electron Devices & Circuits- (1990-) ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS Applied sciences ARSENIC COMPOUNDS ARSENIDES CARRIER MOBILITY Electronics ENGINEERING EPITAXY Exact sciences and technology FABRICATION FIELD EFFECT TRANSISTORS GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM ARSENIDES INDIUM COMPOUNDS LUMINESCENCE MATERIALS SCIENCE MOBILITY MOLECULAR BEAM EPITAXY PHOTOLUMINESCENCE PNICTIDES SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices TRANSISTORS
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description	Strained GaAs/InGaAs/AlGaAs quantum well structures have been grown by molecular beam epitaxy at substrate temperatures from 375 to 510 °C. The well layer thickness and In composition are analyzed by ion channeling and particle-induced x-ray emission as a function of growth temperature. Test structures for modulation-doped field-effect transistors grown at 375 and 510 °C under two different As4 overpressures were also characterized by Van der Pauw measurements and low-temperature photoluminescence. The observed differences in film quality can be explained by the influence of substrate temperature and As4 flux on the cation surface mobility during growth of the InGaAs layer.
doi_str_mv	10.1063/1.103005
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M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures</atitle><jtitle>Applied physics letters</jtitle><date>1990-05-14</date><risdate>1990</risdate><volume>56</volume><issue>20</issue><spage>2022</spage><epage>2024</epage><pages>2022-2024</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Strained GaAs/InGaAs/AlGaAs quantum well structures have been grown by molecular beam epitaxy at substrate temperatures from 375 to 510 °C. The well layer thickness and In composition are analyzed by ion channeling and particle-induced x-ray emission as a function of growth temperature. Test structures for modulation-doped field-effect transistors grown at 375 and 510 °C under two different As4 overpressures were also characterized by Van der Pauw measurements and low-temperature photoluminescence. 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source	AIP Digital Archive
subjects	360602 - Other Materials- Structure & Phase Studies 360603 - Materials- Properties 426000 - Engineering- Components, Electron Devices & Circuits- (1990-) ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS Applied sciences ARSENIC COMPOUNDS ARSENIDES CARRIER MOBILITY Electronics ENGINEERING EPITAXY Exact sciences and technology FABRICATION FIELD EFFECT TRANSISTORS GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM ARSENIDES INDIUM COMPOUNDS LUMINESCENCE MATERIALS SCIENCE MOBILITY MOLECULAR BEAM EPITAXY PHOTOLUMINESCENCE PNICTIDES SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices TRANSISTORS
title	Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures
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