A new hydrogen sensor using a polycrystalline diamond-based Schottky diode

A new hydrogen sensor utilizing plasma-enhanced chemical vapor deposited diamond in conjunction with palladium (Pd) metal has been developed. The device is fabricated in a layered Pd/undoped diamond/p-doped diamond Schottky diode configuration. Hydrogen sensing characteristics of the device have bee...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1994-08, Vol.141 (8), p.2231-2234
Main Authors: KANG, W. P, GURBUZ, Y, DAVIDSON, J. L, KERNS, D. V
Format: Article
Language:English
Subjects:
08 HYDROGEN
080800 - Hydrogen- Properties & Composition
360601 - Other Materials- Preparation & Manufacture
Analytical chemistry
CARBON
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
Chemistry
DEPOSITION
DIAMONDS
ELEMENTAL MINERALS
ELEMENTS
Exact sciences and technology
FABRICATION
General, instrumentation
HYDROGEN
MATERIALS SCIENCE
MINERALS
MONITORING
NONMETALS
PROBES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE COATING
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Summary:A new hydrogen sensor utilizing plasma-enhanced chemical vapor deposited diamond in conjunction with palladium (Pd) metal has been developed. The device is fabricated in a layered Pd/undoped diamond/p-doped diamond Schottky diode configuration. Hydrogen sensing characteristics of the device have been examined in terms of sensitivity, linearity, response rate, and response time as a function of temperature and hydrogen partial pressure. Hydrogen adsorption activation energy is investigated in the temperature range from 27 to 85 degree C. Analysis of the steady-state reaction kinetics using the I-V method confirm that the hydrogen adsorption process is responsible for the barrier height change in the diamond Schottky diode. The ability to fabricate diamond-based hydrogen sensor on a variety of substrates makes the device very versatile for gas sensing.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2055094