Observation of metal-oxide-semiconductor transistor operation using scanning capacitance microscopy

We report scanning capacitance microscopy (SCM) images of a working p-channel metal oxide semiconductor field effect transistor (P-MOSFET) during device operation. Independent bias voltages were applied to the source/gate/drain/well regions of the MOSFET during SCM imaging, and the effect of these v...

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Bibliographic Details
Published in:Applied physics letters 1999-01, Vol.75 (15)
Main Authors: Nakakura, C. Y., Hetherington, D. L., Shaneyfelt, M. R., Shea, P. J., Erickson, A. N.
Format: Article
Language:English
Subjects:
Capacitance
ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
Microscopy
MOSFET
PHYSICS
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Description
Summary:We report scanning capacitance microscopy (SCM) images of a working p-channel metal oxide semiconductor field effect transistor (P-MOSFET) during device operation. Independent bias voltages were applied to the source/gate/drain/well regions of the MOSFET during SCM imaging, and the effect of these voltages on the SCM images is discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.125002