High resolution time-of-flight analysis of photon stimulated ion desorption from chemically treated silicon surfaces

The native oxide, thermally oxidized and hydrofluoric acid rinsed surfaces of Si(100) have been characterized by photon stimulated ion desorption (PSD), and both photoelectron and Auger electron spectroscopies. The only species detected by PSD were H+ ions with different kinetic energies. Low kineti...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 1992-11, Vol.72 (9), p.4156-4160
Main Authors: MOCHIJI, K, LEE, K, MA, C. I, KIM, D. Y, MAHALINGAM, M, HANSON, D. M, JOHNSON, E. D
Format: Article
Language:English
Subjects:
360606 - Other Materials- Physical Properties- (1992-)
AUGER ELECTRON SPECTROSCOPY
CATIONS
CHARGED PARTICLES
CHEMICAL BONDS
CHEMICAL REACTIONS
Condensed matter: structure, mechanical and thermal properties
DESORPTION
ELECTRON SPECTROSCOPY
ELEMENTS
Exact sciences and technology
HYDROGEN IONS
HYDROGEN IONS 1 PLUS
IONS
MATERIALS SCIENCE
Mechanical and acoustical properties
adhesion
OXIDATION
PHOTOELECTRON SPECTROSCOPY
Physics
SEMIMETALS
SILICON
Solid surfaces and solid-solid interfaces
Solid-fluid interfaces
SORPTION
SPECTROSCOPY
SURFACE PROPERTIES
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
TIME-OF-FLIGHT METHOD
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The native oxide, thermally oxidized and hydrofluoric acid rinsed surfaces of Si(100) have been characterized by photon stimulated ion desorption (PSD), and both photoelectron and Auger electron spectroscopies. The only species detected by PSD were H+ ions with different kinetic energies. Low kinetic energy H+ ions were detected only from the HF rinsed surfaces presumably arising from scission of Si—H bonds while higher kinetic energy ions attributed to adsorbed hydrocarbon dissociation were observed for all of the surfaces.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.352224