Burner Rig Hot Corrosion of Silicon Carbide and Silicon Nitride

A number of commercially available SiC and Si3N4 materials were exposed to 1000 C for 40 h in a high-velocity, pressurized burner rig as a simulation of an aircraft turbine environment. Na impurities (2 ppm) added to the burner flame resulted in molten Na2SO4 deposition, attack of the SiC and Si3N4,...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 1990-02, Vol.73 (2), p.303-311
Main Authors: Fox, Dennis S., Smialek, James L.
Format: Article
Language:English
Subjects:
330103 - Internal Combustion Engines- Turbine
360205 - Ceramics, Cermets, & Refractories- Corrosion & Erosion
421000 - Engineering- Combustion Systems
990200 - Mathematics & Computers
ADVANCED PROPULSION SYSTEMS
AIRCRAFT
ALKALI METAL COMPOUNDS
Applied sciences
Building materials. Ceramics. Glasses
BURNERS
CARBIDES
CARBON COMPOUNDS
Ceramic industries
Chemical industry and chemicals
CHEMICAL REACTIONS
CORROSION
CORROSIVE EFFECTS
ENGINEERING
ENGINES
Exact sciences and technology
GAS TURBINE ENGINES
GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
heat engine ceramics
HEAT ENGINES
INTERNAL COMBUSTION ENGINES
MATERIALS SCIENCE
MATERIALS TESTING
NITRIDES
NITROGEN COMPOUNDS
Nonmetallic Materials
oxidation
OXYGEN COMPOUNDS
PITTING CORROSION
PNICTIDES
PRESSURE EFFECTS
silicon carbide
SILICON CARBIDES
SILICON COMPOUNDS
silicon nitride
SILICON NITRIDES
SIMULATION
SODIUM COMPOUNDS
SODIUM SULFATES
SULFATES
SULFUR COMPOUNDS
Technical ceramics
TESTING
VERY LOW TEMPERATURE
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Description
Summary:A number of commercially available SiC and Si3N4 materials were exposed to 1000 C for 40 h in a high-velocity, pressurized burner rig as a simulation of an aircraft turbine environment. Na impurities (2 ppm) added to the burner flame resulted in molten Na2SO4 deposition, attack of the SiC and Si3N4, and formation of substantial Na2O+x(SiO2) corrosion product. Room-temperature strength of the materials decreased as a result of the formation of corrosion pits in SiC and grain-boundary dissolution and pitting in Si3N4.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1990.tb06510.x