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External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range
A tuning range of 200 nm has been achieved with a step-graded multiquantum well InGaAs/InP laser in an external-cavity configuration. Continuous, single-mode lasing could be observed from 1440 to 1640 nm. Depending on the current density, the laser can operate both at the n=1 and n=2 quantized state...
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| Published in: | Applied physics letters 1990-02, Vol.56 (9), p.816-817 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c281t-2a2d81ff3be83b3b0a33ae01d3024290f3d829f94d271cf722c85b59a956d19f3 |
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| cites | cdi_FETCH-LOGICAL-c281t-2a2d81ff3be83b3b0a33ae01d3024290f3d829f94d271cf722c85b59a956d19f3 |
| container_end_page | 817 |
| container_issue | 9 |
| container_start_page | 816 |
| container_title | Applied physics letters |
| container_volume | 56 |
| creator | LIDGARD, A TANBUN-EK, T LOGAN, R. A TEMKIN, H WECHT, K. W OLSSON, N. A |
| description | A tuning range of 200 nm has been achieved with a step-graded multiquantum well InGaAs/InP laser in an external-cavity configuration. Continuous, single-mode lasing could be observed from 1440 to 1640 nm. Depending on the current density, the laser can operate both at the n=1 and n=2 quantized states. At low current density, the n=1 state gives higher gain, whereas for higher carrier densities, the n=2 level dominates. This gives rise to a flat gain profile and an extended operating range, in fact, the widest tuning range reported so far for semiconductor lasers. |
| doi_str_mv | 10.1063/1.102672 |
| format | article |
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A</creatorcontrib><creatorcontrib>TEMKIN, H</creatorcontrib><creatorcontrib>WECHT, K. W</creatorcontrib><creatorcontrib>OLSSON, N. A</creatorcontrib><title>External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range</title><title>Applied physics letters</title><description>A tuning range of 200 nm has been achieved with a step-graded multiquantum well InGaAs/InP laser in an external-cavity configuration. Continuous, single-mode lasing could be observed from 1440 to 1640 nm. Depending on the current density, the laser can operate both at the n=1 and n=2 quantized states. At low current density, the n=1 state gives higher gain, whereas for higher carrier densities, the n=2 level dominates. 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A</creatorcontrib><creatorcontrib>TEMKIN, H</creatorcontrib><creatorcontrib>WECHT, K. W</creatorcontrib><creatorcontrib>OLSSON, N. A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LIDGARD, A</au><au>TANBUN-EK, T</au><au>LOGAN, R. A</au><au>TEMKIN, H</au><au>WECHT, K. W</au><au>OLSSON, N. A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range</atitle><jtitle>Applied physics letters</jtitle><date>1990-02-26</date><risdate>1990</risdate><volume>56</volume><issue>9</issue><spage>816</spage><epage>817</epage><pages>816-817</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A tuning range of 200 nm has been achieved with a step-graded multiquantum well InGaAs/InP laser in an external-cavity configuration. Continuous, single-mode lasing could be observed from 1440 to 1640 nm. Depending on the current density, the laser can operate both at the n=1 and n=2 quantized states. At low current density, the n=1 state gives higher gain, whereas for higher carrier densities, the n=2 level dominates. This gives rise to a flat gain profile and an extended operating range, in fact, the widest tuning range reported so far for semiconductor lasers.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.102672</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1990-02, Vol.56 (9), p.816-817 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_7107526 |
| source | AIP Digital Archive |
| subjects | ARSENIC COMPOUNDS CAVITIES CURRENT DENSITY DESIGN ELECTROMAGNETIC RADIATION ENGINEERING Exact sciences and technology Fundamental areas of phenomenology (including applications) GALLIUM COMPOUNDS INDIUM COMPOUNDS INDIUM PHOSPHATES INFRARED RADIATION Laser optical systems: design and operation LASERS NEAR INFRARED RADIATION Optics OXYGEN COMPOUNDS PHOSPHATES PHOSPHORUS COMPOUNDS Physics RADIATIONS SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS SOLID STATE LASERS 426002 -- Engineering-- Lasers & Masers-- (1990-) TUNING |
| title | External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range |
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