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Pressure dependence of T sub c in L sub 2 minus x M sub x CuO sub 4 minus y ( L =Pr,Nd,Sm,Eu; M =Ce,Th): Antisymmetric behavior of electron- versus hole-doped copper-oxide superconductors

Measurements of the superconducting transition temperature {ital T}{sub {ital c}} in the electron-doped copper-oxide compounds {ital L}{sub 2{minus}{ital x}}M{sub x}CuO{sub 4{minus}{ital y}} under pressure {ital P} to {similar to}20 kbar reveal that, in general, {ital T}{sub {ital c}} decreases with...

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Bibliographic Details
Published in:Physical review letters 1990-01, Vol.64:1
Main Authors: Markert, J.T., Beille, J., Neumeier, J.J., Early, E.A., Seaman, C.L., Moran, T., Maple, M.B.
Format: Article
Language:English
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Summary:Measurements of the superconducting transition temperature {ital T}{sub {ital c}} in the electron-doped copper-oxide compounds {ital L}{sub 2{minus}{ital x}}M{sub x}CuO{sub 4{minus}{ital y}} under pressure {ital P} to {similar to}20 kbar reveal that, in general, {ital T}{sub {ital c}} decreases with {ital P}, in contrast to the behavior of hole-doped copper-oxide compounds. The quantity {ital d} ln{ital T}{sub {ital c}}/{ital d} ln{ital V} exhibits a dependence on {ital T}{sub {ital c}} similar to that of hole-doped compounds, but opposite in sign, and can be as large as {similar to}24. Correlation of structural and transport properties indicates competition between interlayer and intralayer effects in these materials.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.64.80