Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions

The structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions have been studied by transmission electron microscopy, cathodoluminescence (CL), and photoluminescence. In undoped ZnSe epilayers, irregular dislocation segments tending to lie roughly along [100] and [...

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Bibliographic Details
Published in:Applied physics letters 1994-08, Vol.65 (5), p.549-551
Main Authors: Chen, Y., Liu, X., Weber, E., Bourret, E. D., Liliental-Weber, Z., Haller, E. E., Washburn, J., Olego, D. J., Dorman, D. R., Gaines, J. M., Tasker, N. R.
Format: Article
Language:English
Subjects:
360606 - Other Materials- Physical Properties- (1992-)
ARSENIC COMPOUNDS
ARSENIDES
CATHODOLUMINESCENCE
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LINE DEFECTS
LUMINESCENCE
MATERIALS SCIENCE
MICROSCOPY
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
VAPOR PHASE EPITAXY
ZINC COMPOUNDS
ZINC SELENIDES
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Summary:The structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions have been studied by transmission electron microscopy, cathodoluminescence (CL), and photoluminescence. In undoped ZnSe epilayers, irregular dislocation segments tending to lie roughly along [100] and [010] directions were observed as well as long straight 60° dislocations along [110] and [11̄0] directions. In N-doped ([N]≳1×1018 cm−3) ZnSe epilayers, the misfit dislocations were predominantly dissociated into partial dislocations which makes cross slip and formation of irregular dislocations more difficult; only the straight dislocations along [110] and [11̄0] were observed. The CL observations suggest that the irregular dislocations trap carriers more efficiently than the dislocations along 〈110〉.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112293