Single quantum wire semiconductor lasers

Single quantum wire GaAs/AlGaAs injection lasers were fabricated using organometallic chemical vapor deposition on V-grooved GaAs substrates. The quantum wire active region has a crescent-shaped cross section ∼100 Å thick and less than 1000 Å wide. Amplified spontaneous emission and lasing spectra o...

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Bibliographic Details
Published in:Applied physics letters 1989-12, Vol.55 (26), p.2715-2717
Main Authors: KAPON, E, SIMHONY, S, BHAT, R, HWANG, D. M
Format: Article
Language:English
Subjects:
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DATA
DEPOSITION
DIMENSIONS
ELECTRIC CURRENTS
ENGINEERING
Exact sciences and technology
EXPERIMENTAL DATA
FABRICATION
Fundamental areas of phenomenology (including applications)
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
Optics
Physics
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
SOLID STATE LASERS
SURFACE COATING 426002 > Engineering-- Lasers & Masers-- (1990-)
THICKNESS
THIN FILMS
THRESHOLD CURRENT
WIRES
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Description
Summary:Single quantum wire GaAs/AlGaAs injection lasers were fabricated using organometallic chemical vapor deposition on V-grooved GaAs substrates. The quantum wire active region has a crescent-shaped cross section ∼100 Å thick and less than 1000 Å wide. Amplified spontaneous emission and lasing spectra of the quantum wire lasers exhibit effects due to transitions between quasi-one-dimensional subbands separated by ∼10 meV. Single quantum wire laser structures with tight optical confinement exhibited threshold currents as low as 3.5 mA for uncoated devices at room temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.101934