Molecular beam epitaxy HgCdTe infrared photovoltaic detectors

The authors present p-on-n heterostructure HgCdTe photovoltaic device data that illustrate the high performance and flexibility in band-gap control of molecular beam epitaxy technology. This flexibility demonstration was performed by growing material for operation in the following cutoff wavelength...

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Bibliographic Details
Published in:Optical Engineering 1994-05, Vol.33 (5), p.1422-1428
Main Authors: Arias, Jose M, Pasko, John G, Zandian, Majid, Kozlowski, Lester J, DeWames, Roger E
Format: Article
Language:English
Subjects:
Bolometer
infrared, submillimeter wave, microwave and radiowave receivers and detectors
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
DATA
DETECTION
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EPITAXY
Exact sciences and technology
EXPERIMENTAL DATA
HETEROJUNCTIONS
INFORMATION
INFRARED RADIATION
Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
JUNCTIONS
MEASURING INSTRUMENTS
MERCURY COMPOUNDS
MERCURY TELLURIDES
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OTHER INSTRUMENTATION
Photometers, radiometers, and colorimeters
PHYSICAL PROPERTIES
Physics
RADIATION DETECTION
RADIATION DETECTORS
RADIATIONS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR JUNCTIONS
TELLURIDES
TELLURIUM COMPOUNDS 440500 > Thermal Instrumentation-- (1990-)
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Summary:The authors present p-on-n heterostructure HgCdTe photovoltaic device data that illustrate the high performance and flexibility in band-gap control of molecular beam epitaxy technology. This flexibility demonstration was performed by growing material for operation in the following cutoff wavelength ([lambda][sub co]) ranges of interest: long wavelength IR (LWIR) [[lambda][sub co](77 K) = 9 to 11 [mu]m], mid-long wavelength IR (MLWIR) [[delta][sub co](77 K) = 6.8 [mu]m], and very long wavelength IR (VLWIR) [[lambda][sub co](40 K) = 20 [mu]m]. Detailed analyses of the current-voltage characteristics of these diodes as a function of temperature show that their dark currents are diffusion limited down to 80, 50, and 30 K for the MLWIR, LWIR, and VLWIR photodiodes, respectively. In general, the R[sub 0]A device values were uniform for the three band-gap ranges when operating under diffusion-limited conditions. They confirmed this by fabricating a 64 [times] 64 LWIR ([lambda][sub co] = 10.2 [mu]m) hybrid FPA with detectivity (D[sup [star]]) operability greater than 97% when operating at 77 K. The mean D[sup [star]] value for this device was 1.4 [times] 10[sup 11] cm Hz[sup 1/2]/W and it was background limited at the tested flux of 2.18 [times] 10[sup 16] photons/cm[sup 2]s. This device was tested at higher temperatures of operation without changing background conditions, and it remained background limited up to 100 K.
ISSN:0091-3286
1560-2303
DOI:10.1117/12.165818