Characterization of defects in Si and SiO[sub 2][minus]Si using positrons

In the past few years, there has been rapid growth in the positron annihilation spectroscopy (PAS) of overlayers, interfaces, and buried regions of semiconductors. There are few other techniques that are as sensitive as PAS to low concentrations of open-volume-type defects. The characteristics of th...

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Bibliographic Details
Published in:Journal of applied physics 1994-11, Vol.76:9
Main Authors: Asoka-Kumar, P., Lynn, K.G., Welch, D.O.
Format: Article
Language:English
Subjects:
360605 - Materials- Radiation Effects
665300 - Interactions Between Beams & Condensed Matter- (1992-)
ANNIHILATION
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
BASIC INTERACTIONS
CHALCOGENIDES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEFECTS
DOPPLER BROADENING
ELECTROMAGNETIC INTERACTIONS
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
GAMMA RADIATION
INTERACTIONS
INTERFACES
IONIZING RADIATIONS
LEPTONS
LINE BROADENING
MATERIALS SCIENCE
MATERIALS TESTING
MATTER
NONDESTRUCTIVE TESTING
OXIDES
OXYGEN COMPOUNDS
PARTICLE INTERACTIONS
PHYSICAL RADIATION EFFECTS
POSITRONS
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TESTING
TRAPPING
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Description
Summary:In the past few years, there has been rapid growth in the positron annihilation spectroscopy (PAS) of overlayers, interfaces, and buried regions of semiconductors. There are few other techniques that are as sensitive as PAS to low concentrations of open-volume-type defects. The characteristics of the annihilation gamma rays depend strongly on the local environment of the annihilation sites and are used to probe defect concentrations in a range inaccessible to conventional defect probes, yet which are important in the electrical performance of device structures. We show how PAS can be used as a nondestructive probe to examine defects in technologically important Si-based structures. The discussion will focus on the quality of overlayers, formation and annealing of defects after ion implantation, identification of defect complexes, and evaluation of the distribution of internal electric fields. We describe investigations of the activation energy for the detrapping of hydrogen from SiO[sub 2][minus]Si interface trap centers, variations of interface trap density, hole trapping at SiO[sub 2][minus]Si interfaces, and radiation damage in SiO[sub 2][minus]Si systems. We also briefly summarize the use of PAS in compound semiconductor systems and suggest some future directions.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.357207