Layerwise reaction at a buried interface

X-ray diffraction was used to monitor the {ital in} {ital situ} reaction of Pd deposited on Si(111) at room temperature. An ordered silicide forms spontaneously beneath a poorly ordered overlayer. It is commensurate and strained at low coverage, but relaxes to an unstrained state above a critical th...

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Bibliographic Details
Published in:Physical review letters 1992-10, Vol.69 (17), p.2539-2542
Main Authors: BENNETT, P. A, DEVRIES, B, ROBINSON, I. K, ENG, P. J
Format: Article
Language:English
Subjects:
665100 - Nuclear Techniques in Condensed Matter Physics - (1992-)
Applied sciences
BREMSSTRAHLUNG
COHERENT SCATTERING
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Condensed matter: structure, mechanical and thermal properties
CRYSTAL GROWTH
DIFFRACTION
ELECTROMAGNETIC RADIATION
EPITAXY
Exact sciences and technology
IN-SITU PROCESSING
INTERFACES
Metals. Metallurgy
PALLADIUM COMPOUNDS
PALLADIUM SILICIDES
Physics
PROCESSING
RADIATIONS
RELAXATION
SCATTERING
SILICIDES
SILICON COMPOUNDS
Solid surfaces and solid-solid interfaces
STRESS RELAXATION
Surface structure and topography
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
SYNCHROTRON RADIATION
TRANSITION ELEMENT COMPOUNDS
X-RAY DIFFRACTION
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Summary:X-ray diffraction was used to monitor the {ital in} {ital situ} reaction of Pd deposited on Si(111) at room temperature. An ordered silicide forms spontaneously beneath a poorly ordered overlayer. It is commensurate and strained at low coverage, but relaxes to an unstrained state above a critical thickness of 18 A. During both phases of growth sustained intensity oscillations are seen that correspond to a layerwise consumption of the substrate at the buried interface.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.69.2539