A kinetic study of titanium nitride chemical vapor deposition using nitrogen, hydrogen, and titanium tetrachloride

Growth is limited by surface kinetics with the reaction mechanism having a complex dependence upon reactant concentrations. Mathematical model is developed and compared to experimental results. 31 refs.

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1994-03, Vol.141 (3), p.787-795
Main Authors: DEKKER, J. P, VAN DER PUT, P. J, VERINGA, H. J, SCHOONMAN, J
Format: Article
Language:English
Subjects:
360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
CHLORIDES
CHLORINE COMPOUNDS
CONCENTRATION RATIO
Cross-disciplinary physics: materials science
rheology
DEPOSITION
Exact sciences and technology
HALIDES
HALOGEN COMPOUNDS
KINETICS
MATERIALS SCIENCE
Methods of deposition of films and coatings
film growth and epitaxy
NITRIDES
NITROGEN COMPOUNDS
PARAMETRIC ANALYSIS
Physics
PNICTIDES
REACTION KINETICS
SURFACE COATING
TITANIUM CHLORIDES
TITANIUM COMPOUNDS
TITANIUM NITRIDES
TRANSITION ELEMENT COMPOUNDS
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Description
Summary:Growth is limited by surface kinetics with the reaction mechanism having a complex dependence upon reactant concentrations. Mathematical model is developed and compared to experimental results. 31 refs.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2054812