Defect equilibration and stabilization in low-spin-density a-Si:H

Relaxation data provide evidence that thermally generated defects with spin observed in thick, undoped hydrogenated amorphous silicon ({ital a}-Si:H) films can be stabilized with alternate structural configurations. Some quenched-in metastable spins equilibrating further at a lower temperature relax...

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Bibliographic Details
Published in:Physical review. B, Condensed matter Condensed matter, 1992-02, Vol.45 (8), p.4512-4515
Main Author: MC MAHON, T. J
Format: Article
Language:English
Subjects:
360602 - Other Materials- Structure & Phase Studies
AMORPHOUS STATE
ANNEALING
CHEMICAL REACTIONS
Color centers and other defects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
CRYSTAL STRUCTURE
DEFECTS
Electron paramagnetic resonance and relaxation
ELECTRON SPIN RESONANCE
Exact sciences and technology
HEAT TREATMENTS
HYDRIDES
HYDROGEN COMPOUNDS
HYDROGENATION
MAGNETIC RESONANCE
Magnetic resonances and relaxations in condensed matter, mössbauer effect
MATERIALS SCIENCE
MICROSTRUCTURE
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
Physics
RESONANCE
SILANES
SILICON COMPOUNDS
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
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Summary:Relaxation data provide evidence that thermally generated defects with spin observed in thick, undoped hydrogenated amorphous silicon ({ital a}-Si:H) films can be stabilized with alternate structural configurations. Some quenched-in metastable spins equilibrating further at a lower temperature relax and become more resistant to annealing. Although such an observation should be expected for a disordered material, it is inconsistent with predictions of two-level energy-configuration coordinate diagrams. Models employing IeitherR alternate lattice configurations for each metastable spin IorR different weak-bond sites for the mobile hydrogen can be used to explain this result.
ISSN:0163-1829
1095-3795
DOI:10.1103/PhysRevB.45.4512