Plasma-assisted chemical vapor deposition and characterization of boron nitride films

• Published in: Journal of the Electrochemical Society 1994-06, Vol.141 (6), p.1633-1638
• Main Authors: NGUYEN, S. V, NGUYEN, T, TREICHEL, H, SPINDLER, O
• Format: Article
• Language: English
• Subjects: 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 360204 - Ceramics, Cermets, & Refractories- Physical Properties; AZINES; BORANES; BORON COMPOUNDS; BORON NITRIDES; CHEMICAL COATING; CHEMICAL VAPOR DEPOSITION; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); COATINGS; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; DATA; DEPOSITION; ELECTRICAL PROPERTIES; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; EXPERIMENTAL DATA; HETEROCYCLIC COMPOUNDS; HYDRIDES; HYDROGEN COMPOUNDS; INFORMATION; Insulators; MATERIALS SCIENCE; Methods of deposition of films and coatings; film growth and epitaxy; NITRIDES; NITROGEN COMPOUNDS; NUMERICAL DATA; ORGANIC COMPOUNDS; ORGANIC NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; Physics; PNICTIDES; STRUCTURAL CHEMICAL ANALYSIS; SURFACE COATING; VAPOR DEPOSITED COATINGS
• ISSN: 0013-4651; 1945-7111
• DOI: 10.1149/1.2054974

Boron nitride films were deposited in a single-wafer plasma enhanced chemical vapor deposition (PECVD) system using two different reactant gas chemistries: (1) dilute diborane (1% B[sub 2]H[sub 6] in nitrogen), nitrogen and ammonia; (2) borazine (B[sub 3]N[sub 3]H[sub 6]), and nitrogen as precursor materials. Variations of deposition rates, thickness uniformities, refractive indexes, wet and plasma dry etch rates, film stress, and electrical properties were studied as a function of the corresponding deposition parameters. Several analytical methods such as Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, nuclear reaction analysis, elastic recoil detection analysis, scanning and transmission electron microscopy were used to study the deposited films. Electrical properties were measured using metal-insulator-metal and metal-insulator-semiconductor structures. The stable boron nitride films do not react with water vapor showing dielectric constant values between 4.0 and 4.7. These good insulators also show promising characteristics for potential applications in high-performance ultralarge scale integration fabrication.