Synchrotron radiation excited total reflection x-ray fluorescence quantitative analysis of Si wafer by absolute fluorescence intensity calculation

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Published in:Materials letters 2001-06, Vol.49 (1)
Main Authors: Shin, N.S., Chang, C.H., Koo, Y.M., Padmore, H.
Format: Article
Language:English
Subjects:
INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY
QUANTITATIVE CHEMICAL ANALYSIS
REFLECTION
SILICON
SYNCHROTRON RADIATION
X-RAY FLUORESCENCE ANALYSIS
X-RAYS SYNCHROTRON TXRF FLUORESCENCE
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container_title Materials letters
container_volume 49
creator Shin, N.S.
Chang, C.H.
Koo, Y.M.
Padmore, H.
description
doi_str_mv 10.1016/S0167-577X(00)00338-4
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source ScienceDirect Freedom Collection 2022-2024
subjects INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY
QUANTITATIVE CHEMICAL ANALYSIS
REFLECTION
SILICON
SYNCHROTRON RADIATION
X-RAY FLUORESCENCE ANALYSIS
X-RAYS SYNCHROTRON TXRF FLUORESCENCE
title Synchrotron radiation excited total reflection x-ray fluorescence quantitative analysis of Si wafer by absolute fluorescence intensity calculation
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