Enhanced nitrogen incorporation by pulsed laser annealing of GaNxAs1−x formed by N ion implantation

We demonstrate that pulsed laser annealing followed by rapid thermal annealing greatly enhances incorporation of substitutional N in N+-implanted GaAs. Films implanted to 1.8% N exhibit a fundamental band gap of 1.26 eV (a band gap reduction of 160 meV), corresponding to an N activation efficiency o...

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Bibliographic Details
Published in:Applied physics letters 2002-05, Vol.80 (21), p.3958-3960
Main Authors: Yu, K. M., Walukiewicz, W., Beeman, J. W., Scarpulla, M. A., Dubon, O. D., Pillai, M. R., Aziz, M. J.
Format: Article
Language:English
Subjects:
ANNEALING
ION IMPLANTATION
LASERS
MATERIALS SCIENCE
NITROGEN
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Summary:We demonstrate that pulsed laser annealing followed by rapid thermal annealing greatly enhances incorporation of substitutional N in N+-implanted GaAs. Films implanted to 1.8% N exhibit a fundamental band gap of 1.26 eV (a band gap reduction of 160 meV), corresponding to an N activation efficiency of 50%. The optical and crystalline quality of the synthesized film is comparable to GaNxAs1−x thin films of similar composition grown by epitaxial growth techniques. Compared to films produced by N+ implantation and rapid thermal annealing only, the introduction of pulsed laser annealing improves N incorporation by a factor of 5. Moreover, we find that the synthesized films are thermally stable up to an annealing temperature of 950 °C.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1481196