Oxygen related defect center formation in MeV energy boron implanted silica

Silica samples were implanted with 1.6 and 4 MeV B 2+ at nominal doses ranging from 0.5 to 5.0 × 10 15 ions/cm 2. Sample temperatures during implantation were either 100, 300 or 673 K. Optical absorption was measured from 2.7 to 6.5 eV and in all spectra two maxima were resolved at 5.0 and 5.8 eV. B...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1999-11, Vol.259 (1), p.73-80
Main Authors: Magruder III, R.H., Weeks, R.A., Weller, R.A., Zuhr, R.A., Hensley, D.K.
Format: Article
Language:English
Subjects:
BORON
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Condensed matter: electronic structure, electrical, magnetic, and optical properties
DEFECTS
Disordered solids
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
OXYGEN
Physics
SILICA
Visible and ultraviolet spectra
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Summary:Silica samples were implanted with 1.6 and 4 MeV B 2+ at nominal doses ranging from 0.5 to 5.0 × 10 15 ions/cm 2. Sample temperatures during implantation were either 100, 300 or 673 K. Optical absorption was measured from 2.7 to 6.5 eV and in all spectra two maxima were resolved at 5.0 and 5.8 eV. Based on the literature we assumed bands at 4.8, 5.01, 5.17, 5.88, and 7.15 eV comprised the observed spectra. Assuming that the shapes of these bands were Gaussian functions, the data was fitted by allowing the maximum amplitude to be a free parameter. The fit between 2.5 and 5.5 eV was within ±3%. At larger energies the fit was worse. Assuming that there was a band at 6.35 eV reduced the difference between the fit and the data to
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(99)00498-6