Inversion domains in AlN grown on (0001) sapphire

Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries...

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Bibliographic Details
Published in:Applied physics letters 2003-10, Vol.83 (14), p.2811-2813
Main Authors: Jasinski, J., Liliental-Weber, Z., Paduano, Q. S., Weyburne, D. W.
Format: Article
Language:English
Subjects:
ALUMINIUM NITRIDES
CRYSTAL GROWTH
DEFECTS
DOMAIN STRUCTURE
ETCHING
MATERIALS SCIENCE
MICROSTRUCTURE
MORPHOLOGY
SAPPHIRE
SHAPE
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
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Summary:Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2°±0.5° from the c axis. TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1616191