Structure and Electronic Properties of Amorphous LaAlO3 Film on In0.53Ga0.47As

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Bibliographic Details
Published in:Applied physics letters 2007-07
Main Authors: Goel, N., Tsai, W., Garner, C.M., /Intel, Santa Clara, Sun, Y., Pianetta, P., /SLAC, SSRL, Warusawithana, M., Schlom, D.G., /Penn State U., Wen, H., Gaspe, C., Keay, J.C., Santos, M.B., /Oklahoma U., Goncharova, L.V., Garfunkel, E., Gustafsson, T., /Rutgers U., Piscataway
Format: Article
Language:English
Subjects:
ALUMINIUM OXIDES
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
INDIUM ARSENIDES
LANTHANUM OXIDES
MATERIALS SCIENCE
MORPHOLOGY
Other,MATSCI
SUBSTRATES
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ISSN:0003-6951
1077-3118