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Structural modification of Ge-Se amorphous films with the addition of Sb
Extended X-ray absorption fine-structure (EXAFS) measurements were undertaken to understand the structural modification of amorphous Ge-Se films that occurs with the addition of Sb. We found that Ge-Ge bonds exist along with Ge-Se bonds in Ge-rich Ge-Se films. These bonds disappear with increasing S...
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| Published in: | Philosophical magazine letters 2005-10, Vol.85 (10), p.503-512 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c433t-581cc9b5cf166ccb88d530ea98b415a896cec6b6a878768aa3a2d689d5d54e823 |
| container_end_page | 512 |
| container_issue | 10 |
| container_start_page | 503 |
| container_title | Philosophical magazine letters |
| container_volume | 85 |
| creator | Ganjoo, A. Jain, H. Khalid, S. Pantano, C. G. |
| description | Extended X-ray absorption fine-structure (EXAFS) measurements were undertaken to understand the structural modification of amorphous Ge-Se films that occurs with the addition of Sb. We found that Ge-Ge bonds exist along with Ge-Se bonds in Ge-rich Ge-Se films. These bonds disappear with increasing Se content, to the extent that Ge-Se bonds predominate in stoichiometric GeSe
2
films. When Ge is replaced by Sb, stable Sb-Se bonds are formed; concurrently, the proportion of Ge-Ge bonds is decreased at the expense of Ge-Se bonds. As a result, GeSbSe glasses have a more stable and stronger network structure. |
| doi_str_mv | 10.1080/09500830500318841 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_913942</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>28811509</sourcerecordid><originalsourceid>FETCH-LOGICAL-c433t-581cc9b5cf166ccb88d530ea98b415a896cec6b6a878768aa3a2d689d5d54e823</originalsourceid><addsrcrecordid>eNqFkMFKAzEQhoMoWKsP4G096G01aTZpAl5EtAoFD9VzmJ3N0sjupiYptW_vlrZ4KOhl5jDf9w8zhFwyesuoondUC0oVp33lTKmCHZEB43KUc8rlMRls5nkP6FNyFuMnpbTQhRiQl1kKS0zLAE3W-srVDiE532W-ziY2n9kMWh8Wc7-MWe2aNmYrl-ZZmveDqnJ7dFaek5Mammgvdn1IPp6f3h9f8unb5PXxYZpjwXnKhWKIuhRYMykRS6UqwakFrcqCCVBaokVZSlBjNZYKgMOokkpXohKFVSM-JFfbXB-TMxFdsjhH33UWk9GM62LD3GyZRfBfSxuTaV1E2zTQ2f4QM1KKMUF1D7ItiMHHGGxtFsG1ENaGUbP5qzn4a-9c78IhIjR1gA5d_BXHnGtJec_dbznX1T60sPKhqUyCdePDXuJ_rRn_qx9YJn0n_gNtBpvb</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28811509</pqid></control><display><type>article</type><title>Structural modification of Ge-Se amorphous films with the addition of Sb</title><source>Taylor and Francis Science and Technology Collection</source><creator>Ganjoo, A. ; Jain, H. ; Khalid, S. ; Pantano, C. G.</creator><creatorcontrib>Ganjoo, A. ; Jain, H. ; Khalid, S. ; Pantano, C. G. ; Brookhaven National Laboratory (BNL) National Synchrotron Light Source</creatorcontrib><description>Extended X-ray absorption fine-structure (EXAFS) measurements were undertaken to understand the structural modification of amorphous Ge-Se films that occurs with the addition of Sb. We found that Ge-Ge bonds exist along with Ge-Se bonds in Ge-rich Ge-Se films. These bonds disappear with increasing Se content, to the extent that Ge-Se bonds predominate in stoichiometric GeSe
2
films. When Ge is replaced by Sb, stable Sb-Se bonds are formed; concurrently, the proportion of Ge-Ge bonds is decreased at the expense of Ge-Se bonds. As a result, GeSbSe glasses have a more stable and stronger network structure.</description><identifier>ISSN: 0950-0839</identifier><identifier>EISSN: 1362-3036</identifier><identifier>DOI: 10.1080/09500830500318841</identifier><identifier>CODEN: PMLEEG</identifier><language>eng</language><publisher>London: Taylor & Francis Group</publisher><subject>ABSORPTION ; ANTIMONY ; Exact sciences and technology ; FINE STRUCTURE ; MATERIALS SCIENCE ; MODIFICATIONS ; national synchrotron light source ; NSLS ; PARTICLE ACCELERATORS ; Physics</subject><ispartof>Philosophical magazine letters, 2005-10, Vol.85 (10), p.503-512</ispartof><rights>Copyright Taylor & Francis Group, LLC 2005</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c433t-581cc9b5cf166ccb88d530ea98b415a896cec6b6a878768aa3a2d689d5d54e823</citedby><cites>FETCH-LOGICAL-c433t-581cc9b5cf166ccb88d530ea98b415a896cec6b6a878768aa3a2d689d5d54e823</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17339603$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/913942$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Ganjoo, A.</creatorcontrib><creatorcontrib>Jain, H.</creatorcontrib><creatorcontrib>Khalid, S.</creatorcontrib><creatorcontrib>Pantano, C. G.</creatorcontrib><creatorcontrib>Brookhaven National Laboratory (BNL) National Synchrotron Light Source</creatorcontrib><title>Structural modification of Ge-Se amorphous films with the addition of Sb</title><title>Philosophical magazine letters</title><description>Extended X-ray absorption fine-structure (EXAFS) measurements were undertaken to understand the structural modification of amorphous Ge-Se films that occurs with the addition of Sb. We found that Ge-Ge bonds exist along with Ge-Se bonds in Ge-rich Ge-Se films. These bonds disappear with increasing Se content, to the extent that Ge-Se bonds predominate in stoichiometric GeSe
2
films. When Ge is replaced by Sb, stable Sb-Se bonds are formed; concurrently, the proportion of Ge-Ge bonds is decreased at the expense of Ge-Se bonds. As a result, GeSbSe glasses have a more stable and stronger network structure.</description><subject>ABSORPTION</subject><subject>ANTIMONY</subject><subject>Exact sciences and technology</subject><subject>FINE STRUCTURE</subject><subject>MATERIALS SCIENCE</subject><subject>MODIFICATIONS</subject><subject>national synchrotron light source</subject><subject>NSLS</subject><subject>PARTICLE ACCELERATORS</subject><subject>Physics</subject><issn>0950-0839</issn><issn>1362-3036</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFkMFKAzEQhoMoWKsP4G096G01aTZpAl5EtAoFD9VzmJ3N0sjupiYptW_vlrZ4KOhl5jDf9w8zhFwyesuoondUC0oVp33lTKmCHZEB43KUc8rlMRls5nkP6FNyFuMnpbTQhRiQl1kKS0zLAE3W-srVDiE532W-ziY2n9kMWh8Wc7-MWe2aNmYrl-ZZmveDqnJ7dFaek5Mammgvdn1IPp6f3h9f8unb5PXxYZpjwXnKhWKIuhRYMykRS6UqwakFrcqCCVBaokVZSlBjNZYKgMOokkpXohKFVSM-JFfbXB-TMxFdsjhH33UWk9GM62LD3GyZRfBfSxuTaV1E2zTQ2f4QM1KKMUF1D7ItiMHHGGxtFsG1ENaGUbP5qzn4a-9c78IhIjR1gA5d_BXHnGtJec_dbznX1T60sPKhqUyCdePDXuJ_rRn_qx9YJn0n_gNtBpvb</recordid><startdate>20051001</startdate><enddate>20051001</enddate><creator>Ganjoo, A.</creator><creator>Jain, H.</creator><creator>Khalid, S.</creator><creator>Pantano, C. G.</creator><general>Taylor & Francis Group</general><general>Taylor & Francis</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20051001</creationdate><title>Structural modification of Ge-Se amorphous films with the addition of Sb</title><author>Ganjoo, A. ; Jain, H. ; Khalid, S. ; Pantano, C. G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c433t-581cc9b5cf166ccb88d530ea98b415a896cec6b6a878768aa3a2d689d5d54e823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>ABSORPTION</topic><topic>ANTIMONY</topic><topic>Exact sciences and technology</topic><topic>FINE STRUCTURE</topic><topic>MATERIALS SCIENCE</topic><topic>MODIFICATIONS</topic><topic>national synchrotron light source</topic><topic>NSLS</topic><topic>PARTICLE ACCELERATORS</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ganjoo, A.</creatorcontrib><creatorcontrib>Jain, H.</creatorcontrib><creatorcontrib>Khalid, S.</creatorcontrib><creatorcontrib>Pantano, C. G.</creatorcontrib><creatorcontrib>Brookhaven National Laboratory (BNL) National Synchrotron Light Source</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Philosophical magazine letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ganjoo, A.</au><au>Jain, H.</au><au>Khalid, S.</au><au>Pantano, C. G.</au><aucorp>Brookhaven National Laboratory (BNL) National Synchrotron Light Source</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural modification of Ge-Se amorphous films with the addition of Sb</atitle><jtitle>Philosophical magazine letters</jtitle><date>2005-10-01</date><risdate>2005</risdate><volume>85</volume><issue>10</issue><spage>503</spage><epage>512</epage><pages>503-512</pages><issn>0950-0839</issn><eissn>1362-3036</eissn><coden>PMLEEG</coden><abstract>Extended X-ray absorption fine-structure (EXAFS) measurements were undertaken to understand the structural modification of amorphous Ge-Se films that occurs with the addition of Sb. We found that Ge-Ge bonds exist along with Ge-Se bonds in Ge-rich Ge-Se films. These bonds disappear with increasing Se content, to the extent that Ge-Se bonds predominate in stoichiometric GeSe
2
films. When Ge is replaced by Sb, stable Sb-Se bonds are formed; concurrently, the proportion of Ge-Ge bonds is decreased at the expense of Ge-Se bonds. As a result, GeSbSe glasses have a more stable and stronger network structure.</abstract><cop>London</cop><pub>Taylor & Francis Group</pub><doi>10.1080/09500830500318841</doi><tpages>10</tpages></addata></record> |
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| ispartof | Philosophical magazine letters, 2005-10, Vol.85 (10), p.503-512 |
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| source | Taylor and Francis Science and Technology Collection |
| subjects | ABSORPTION ANTIMONY Exact sciences and technology FINE STRUCTURE MATERIALS SCIENCE MODIFICATIONS national synchrotron light source NSLS PARTICLE ACCELERATORS Physics |
| title | Structural modification of Ge-Se amorphous films with the addition of Sb |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-30T16%3A46%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Structural%20modification%20of%20Ge-Se%20amorphous%20films%20with%20the%20addition%20of%20Sb&rft.jtitle=Philosophical%20magazine%20letters&rft.au=Ganjoo,%20A.&rft.aucorp=Brookhaven%20National%20Laboratory%20(BNL)%20National%20Synchrotron%20Light%20Source&rft.date=2005-10-01&rft.volume=85&rft.issue=10&rft.spage=503&rft.epage=512&rft.pages=503-512&rft.issn=0950-0839&rft.eissn=1362-3036&rft.coden=PMLEEG&rft_id=info:doi/10.1080/09500830500318841&rft_dat=%3Cproquest_osti_%3E28811509%3C/proquest_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c433t-581cc9b5cf166ccb88d530ea98b415a896cec6b6a878768aa3a2d689d5d54e823%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28811509&rft_id=info:pmid/&rfr_iscdi=true |