N incorporation, composition and electronic structure in N-doped TiO2(001) anatase epitaxial films grown on LaAlO3(001)

We have investigated the properties of N-doped TiO2 anatase grown by plasma-assisted molecular beam epitaxy on LaAlO3(001) substrates. Phase-pure epitaxial films in which N substitutes for O with no secondary phase formation nucleate only over a narrow range of fluxes. N substitution for O results i...

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Bibliographic Details
Published in:Surface science 2008, Vol.602 (1), p.133-141
Main Authors: CHEUNG, S. H, NACHIMUTHU, P, ENGELHARD, M. H, WANG, C. M, CHAMBERS, S. A
Format: Article
Language:English
Subjects:
ANIONS
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
ELECTRONIC STRUCTURE
Environmental Molecular Sciences Laboratory
Exact sciences and technology
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
Physics
RED SHIFT
RUTILE
SOLUBILITY
SUBSTRATES
VALENCE
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Summary:We have investigated the properties of N-doped TiO2 anatase grown by plasma-assisted molecular beam epitaxy on LaAlO3(001) substrates. Phase-pure epitaxial films in which N substitutes for O with no secondary phase formation nucleate only over a narrow range of fluxes. N substitution for O results in N 2p derived states off the top of the anatase valence band and the associated red shift in the optical bandgap.
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2007.09.061