Growth and Characterization of Pendeo-Epitaxial GaN_(11_20) on4H-SiC_(11_20) Substrates

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Bibliographic Details
Published in:Journal of crystal growth 2005-06, Vol.290
Main Authors: Wagner, B.P., Reitmeier, Z.J., Park, J.S., Bachelor, D., Zakharov, D.N., Liliental-Weber, Z., Davis, R.F.
Format: Article
Language:English
Subjects:
75
CRYSTAL GROWTH
CRYSTAL STRUCTURE
EPITAXY
GALLIUM NITRIDES
SILICON CARBIDES
SUBSTRATES
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ISSN:0022-0248
1873-5002