In situ studies of the effect of silicon on GaN growth modes

We present real-time X-ray scattering studies of the influence of silicon on the homoepitaxial growth mode of GaN grown by metal-organic vapor-phase epitaxy. Both annealing of Si-doped GaN and surface dosing of GaN with disilane are shown to change the mode of subsequent growth from step-flow to lay...

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Bibliographic Details
Published in:Journal of crystal growth 2000-12, Vol.221 (1), p.98-105
Main Authors: Munkholm, A, Stephenson, G.B, Eastman, J.A, Auciello, O, Murty, M.V.Ramana, Thompson, Carol, Fini, P, Speck, J.S, DenBaars, S.P
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
CRYSTAL GROWTH
DOPED MATERIALS
Exact sciences and technology
GALLIUM NITRIDES
GaN
MATERIALS SCIENCE
METALLURGICAL EFFECTS
Methods of deposition of films and coatings
film growth and epitaxy
MOCVD
Physics
SILICON
Silicon doping
VAPOR PHASE EPITAXY
Vapor phase epitaxy
growth from vapor phase
X-RAY DIFFRACTION
X-ray scattering
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Summary:We present real-time X-ray scattering studies of the influence of silicon on the homoepitaxial growth mode of GaN grown by metal-organic vapor-phase epitaxy. Both annealing of Si-doped GaN and surface dosing of GaN with disilane are shown to change the mode of subsequent growth from step-flow to layer-by-layer. By comparing the growth behavior induced by doped layers which have been annealed to that induced by surface dosing, we extract an approximate diffusion coefficient for Si in GaN of 3.5 ×10 −18 cm 2/ s at 810°C.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00656-4