Geometric Effects on the Dislocation Nucleation Condition in Strained Electronics

Dislocation loops may be nucleated from sharp geometric features in strained micro- and nanoelectronic devices. This process is investigated by a dissipative cohesive interface model which treats the dislocation core as a continuous, inhomogeneous lattice slip field. As a representative example, we...

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Bibliographic Details
Published in:Applied physics letters 2009-01, Vol.94 (17)
Main Authors: Li, Tianlei, Lee, Jinhaeng, Gao, Yanfei, Pharr, George M, Huang, Min, Tsui, Ting-Yiu
Format: Article
Language:English
Subjects:
DISLOCATIONS
MATERIALS SCIENCE
MATHEMATICAL MODELS
MICROELECTRONICS
NUCLEATION
SILICON
SILICON NITRIDES
SLIP
SUBSTRATES
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Summary:Dislocation loops may be nucleated from sharp geometric features in strained micro- and nanoelectronic devices. This process is investigated by a dissipative cohesive interface model which treats the dislocation core as a continuous, inhomogeneous lattice slip field. As a representative example, we calculate the critical stress for dislocation nucleation from edges/corners of a rectangular Si3N4 pad on Si substrate, as a function of geometric parameters such as the lengthto-height ratio and the three dimensional shape of the pad. Multiple dislocations and their shapes have also been simulated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3126520