Comparison of CF4 and SF6 based plasmas for ECR etching of isotopically enriched 10boron films

Isotopically enriched 10boron films have been successfully etched in an Electron Cyclotron Resonance (ECR) etching tool using CF4 and SF6 based plasmas. Comparisons between the two are made with regard to etch rate, selectivity to the underlying Si device structure, and morphology of the 10boron pos...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2009-07, Vol.606 (3), p.821-823
Main Authors: Voss, L.F., Reinhardt, C.E., Graff, R.T., Conway, A.M., Nikolić, R.J., Deo, Nirmalendu, Cheung, Chin Li
Format: Article
Language:English
Subjects:
Boron
BORON 10
CARBON TETRAFLUORIDE
Detector
ENGINEERING
Etch
ETCHING
FABRICATION
MORPHOLOGY
Neutron
PLASMA
Processing
SILICON
SULFUR FLUORIDES
THERMAL NEUTRONS
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Summary:Isotopically enriched 10boron films have been successfully etched in an Electron Cyclotron Resonance (ECR) etching tool using CF4 and SF6 based plasmas. Comparisons between the two are made with regard to etch rate, selectivity to the underlying Si device structure, and morphology of the 10boron post-etching. Our present film etching development is expected to be critical for the fabrication of next generation thermal neutron solid state detectors based on 10boron.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2009.05.020