Ultrafast carrier capture in InGaAs quantum posts

To explore the capture dynamics of photoexcited carriers in semiconductor quantum posts, optical pump terahertz (THz) probe and time-resolved photoluminescence spectroscopy were performed. The results of the THz experiment show that after ultrafast excitation, electrons relax within a few picosecond...

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Bibliographic Details
Published in:Applied physics letters 2009-12, Vol.95 (25), p.251105-251105-3
Main Authors: Stehr, D., Morris, C. M., Talbayev, D., Wagner, M., Kim, H. C., Taylor, A. J., Schneider, H., Petroff, P. M., Sherwin, M. S.
Format: Article
Language:English
Subjects:
ELECTRONS
EXCITATION
MATERIALS SCIENCE
NANOSTRUCTURES
PHOTOLUMINESCENCE
PROBES
SATURATION
SPECTROSCOPY
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Summary:To explore the capture dynamics of photoexcited carriers in semiconductor quantum posts, optical pump terahertz (THz) probe and time-resolved photoluminescence spectroscopy were performed. The results of the THz experiment show that after ultrafast excitation, electrons relax within a few picoseconds into the quantum posts, which act as efficient traps. The saturation of the quantum post states, probed by photoluminescence, was reached at approximately ten times the quantum post density in the samples. The results imply that quantum posts are highly attractive nanostructures for future device applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3275666