In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN

Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition...

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Bibliographic Details
Published in:Applied physics letters 2010-02, Vol.96 (5), p.051911-051911-3
Main Authors: Richard, M.-I., Highland, M. J., Fister, T. T., Munkholm, A., Mei, J., Streiffer, S. K., Thompson, Carol, Fuoss, P. H., Stephenson, G. B.
Format: Article
Language:English
Subjects:
CHEMICAL VAPOR DEPOSITION
MATERIALS SCIENCE
ORIGIN
PARTICLE ACCELERATORS
RELAXATION
STRAINS
SYNCHROTRONS
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Summary:Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of In x Ga 1 − x N on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3293441