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Photoluminescence of He-implanted ZnO

A study of the effects of ion-implanted He{sup +} on the 4.2 K photoluminescence (PL) of ZnO is presented. This investigation is motivated by the need to further understand the effects of damage resulting from the implantation process on the PL of ZnO. For this study, 10 keV He{sup +} ions were impl...

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Main Authors:	Hamby, D W, Lucca, D A, Lee, J -K, Nastasi, Michael Anthony
Format:	Conference Proceeding
Language:	English
Subjects:	ACTIVATION ENERGY DEFECTS EFFICIENCY INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ION BEAMS LUMINESCENCE MODIFICATIONS PHOTOLUMINESCENCE
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description	A study of the effects of ion-implanted He{sup +} on the 4.2 K photoluminescence (PL) of ZnO is presented. This investigation is motivated by the need to further understand the effects of damage resulting from the implantation process on the PL of ZnO. For this study, 10 keV He{sup +} ions were implanted at a dose of 2.5 x 10{sup 13}/cm{sup 2} in the (0001) Zn-terminated surface. The implantation process is seen to reduce the overall luminescence efficiency, although the number and relative intensities of the bound-exciton peaks are observed to be similar to that of unimplanted ZnO. The 4.2 K PL of the implanted surface exhibits a broad orange/red peak near 1.86 eV nm and is attributed to damage introduced during the implantation process. This peak is identified as donor-acceptor pair (DAP) luminescence with a thermal activation energy of 11 meV. The 1.86 eV peak is not observed for H-implanted ZnO suggesting that H passivates the implantation-induced defects responsible for this luminescence.
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subjects	ACTIVATION ENERGY DEFECTS EFFICIENCY INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ION BEAMS LUMINESCENCE MODIFICATIONS PHOTOLUMINESCENCE
title	Photoluminescence of He-implanted ZnO
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