Ion irradiation of porous silicon : the role of surface states

The summary and conclusions of this paper are: (1) Ion irradiation induces PL quenching from po-Si; (2) Interaction of the implanted ions with defects generated during the irradiation process plays a major role in the PL quenching mechanism; (3) Quenching was associated with the creation of nonradia...

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Bibliographic Details
Main Authors: Jacobsohn, L G, Bennett, B L, Cooke, D W, Muenchausen, Ross E, Nastasi, Michael Anthony
Format: Conference Proceeding
Language:English
Subjects:
DEFECTS
ION BEAMS
ION IMPLANTATION
MATERIALS SCIENCE
OXIDATION
PHOTOLUMINESCENCE
POROUS MATERIALS
QUENCHING
SILICON
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Summary:The summary and conclusions of this paper are: (1) Ion irradiation induces PL quenching from po-Si; (2) Interaction of the implanted ions with defects generated during the irradiation process plays a major role in the PL quenching mechanism; (3) Quenching was associated with the creation of nonradiative states within the gap; and (4) Exposition to air and consequently the oxidation of the surface is shown to enhance PL emission efficiency.
ISSN:0168-583X
1872-9584