Cu-related recombination in CdS/CdTe solar cells

Cu used in the back contact of CdS/CdTe solar cells is known to improve contact behavior and open-circuit voltage. A study of devices made with varying Cu amounts confirmed these observations. However, Cu was also found to be deleterious to current collection. Time-resolved photoluminescence measure...

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Bibliographic Details
Published in:Thin solid films 2008-02, Vol.516 (8), p.2251-2254
Main Authors: Demtsu, S.H., Albin, D.S., Sites, J.R., Metzger, W.K., Duda, A.
Format: Article
Language:English
Subjects:
Applied sciences
BEHAVIOR
Cadmium telluride
Capacitance profiling
CARRIER LIFETIME
CARRIERS
Condensed matter: electronic structure, electrical, magnetic, and optical properties
CURRENTS
DENSITY
ELECTRIC POTENTIAL
Energy
Exact sciences and technology
LIFETIME
MATERIALS SCIENCE
Natural energy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
PHOTOLUMINESCENCE
Photovoltaic conversion
Physics
RECOMBINATION
SOLAR CELLS
Solar cells. Photoelectrochemical cells
SOLAR ENERGY
Solar Energy - Photovoltaics
TEMPERATURE RANGE 0065-0273 K
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Description
Summary:Cu used in the back contact of CdS/CdTe solar cells is known to improve contact behavior and open-circuit voltage. A study of devices made with varying Cu amounts confirmed these observations. However, Cu was also found to be deleterious to current collection. Time-resolved photoluminescence measurements of CdTe devices show that carrier lifetime decreased with increased Cu concentration. Drive-level-capacitance-profiling and low-temperature photoluminescence suggest this decrease in lifetime was associated with increased recombination center density introduced by Cu in the CdTe layer. The resulting impact of increased Cu on device performance was a voltage-dependent collection of photogenerated carriers that reduced fill-factor.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2007.08.035