Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution

High resolution photoluminescence (PL) spectroscopy was performed on high quality bulk GaAs, lightly doped with the nitrogen isoelectronic impurity. The shallowest nitrogen pair bound exciton center labeled as X{sub 1} revealed a total of six transitions. The photoluminescence lines from a small ens...

Full description

Saved in:
Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2007-09, Vol.76 (12), Article 125209
Main Authors: Karaiskaj, D., Mascarenhas, A., Klem, J. F., Volz, K., Stolz, W., Adamcyk, M., Tiedje, T.
Format: Article
Language:English
Subjects:
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
ELEVATORS
EXCITONS
MATERIALS SCIENCE
Materials Science and Semiconductors
NITROGEN
PHOTOLUMINESCENCE
POLARIZATION
RESOLUTION
Solid State Spectroscopy
SPATIAL RESOLUTION
SPECTRA
SPECTROSCOPY
SUPPORTS
SYMMETRY
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:High resolution photoluminescence (PL) spectroscopy was performed on high quality bulk GaAs, lightly doped with the nitrogen isoelectronic impurity. The shallowest nitrogen pair bound exciton center labeled as X{sub 1} revealed a total of six transitions. The photoluminescence lines from a small ensemble of nitrogen centers showed polarization dependent intensity. High spectral resolution PL spectroscopy was combined with confocal spectroscopy experiments performed on a GaAs:N/AlGaAs heterostructure. The high spatial resolution achieved by this technique enables us to localize and examine individual nitrogen bound excitons. Similar spectral structure and polarization dependence was observed for individual N-pair centers in GaAs. Both techniques support the C{sub 2v} symmetry of such isoelectronic impurity centers. The comparison between the PL spectra from an ensemble of nitrogen pairs and individual centers demonstrate the ability of the single impurity technique to lift the orientational degeneracy.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.76.125209