Constraints on Models of Electrical Transport in Optimally Doped La2−xSrxCuO4 from Measurements of Radiation-Induced Defect Resistance

Precise measurements of the temperature dependence of additional resistivity caused by defect scattering were used to constrain models of carrier transport in La 1.84 Sr 0.16 CuO 4 . Where previous magnetotransport studies have delineated two distinct scattering processes, proportional to T and T 2...

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Bibliographic Details
Published in:Journal of superconductivity and novel magnetism 2010-02, Vol.23 (3), p.339-342
Main Authors: Clayhold, J. A., Pelleg, O., Ingram, D. C., Bollinger, A. T., Logvenov, G., Rench, D. W., Kerns, B. M., Schroer, M. D., Sundling, R. J., Bozovic, I.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Condensed Matter Physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Condensed matter: electronic structure, electrical, magnetic, and optical properties
DEFECTS
Exact sciences and technology
Magnetic Materials
Magnetism
Original Paper
Physics
Physics and Astronomy
Properties of type I and type II superconductors
SCATTERING
Strongly Correlated Systems
Superconductivity
TEMPERATURE DEPENDENCE
TRANSPORT
Transport properties (electric and thermal conductivity, thermoelectric effects, etc.)
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Summary:Precise measurements of the temperature dependence of additional resistivity caused by defect scattering were used to constrain models of carrier transport in La 1.84 Sr 0.16 CuO 4 . Where previous magnetotransport studies have delineated two distinct scattering processes, proportional to T and T 2 , respectively, the new defect scattering results suggest strongly that the two processes act as parallel conductance channels.
ISSN:1557-1939
1557-1947
DOI:10.1007/s10948-009-0580-8