Boron ion source based on planar magnetron discharge in self-sputtering mode

An ion source based on a planar magnetron sputtering device with thermally isolated target has been designed and demonstrated. For a boron sputtering target, high target temperature is required because boron has low electrical conductivity at room temperature, increasing with temperature. The target...

Full description

Saved in:
Bibliographic Details
Published in:Review of scientific instruments 2010-02, Vol.81 (2), p.02B303-02B303-3
Main Authors: Gushenets, V. I., Hershcovitch, A., Kulevoy, T. V., Oks, E. M., Savkin, K. P., Vizir, A. V., Yushkov, G. Yu
Format: Article
Language:English
Subjects:
BEAMS
BENDING
BORON
BORON IONS
ELECTRIC CONDUCTIVITY
INDUSTRY
ION SOURCES
LENGTH
MAGNETRONS
MEETINGS
PARTICLE ACCELERATORS
POWER
PULSES
SPUTTERING
SURFACES
TARGETS
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An ion source based on a planar magnetron sputtering device with thermally isolated target has been designed and demonstrated. For a boron sputtering target, high target temperature is required because boron has low electrical conductivity at room temperature, increasing with temperature. The target is well-insulated thermally and can be heated by an initial low-current, high-voltage discharge mode. A discharge power of 16 W was adequate to attain the required surface temperature ( 400 ° C ) , followed by transition of the discharge to a high-current, low-voltage mode for which the magnetron enters a self-sputtering operational mode. Beam analysis was performed with a time-of-flight system; the maximum boron ion fraction in the beam is greater than 99%, and the mean boron ion fraction, time-integrated over the whole pulse length, is about 95%. We have plans to make the ion source steady state and test with a bending magnet. This kind of boron ion source could be competitive to conventional boron ion sources that utilize compounds such as BF 3 , and could be useful for semiconductor industry application.
ISSN:0034-6748
1089-7623
DOI:10.1063/1.3258029