Effects of active layer thickness and thermal annealing on polythiophene: Fullerene bulk heterojunction photovoltaic devices

The effect of thermal annealing on photovoltaic devices comprising poly(3-hexylthiophene):[6,6]-phenyl C 61 butyric acid methyl ester (P3HT:PCBM) with thicknesses up to 1200 nm was investigated. Without thermal annealing, the efficiency of the as-prepared devices decreased with increasing active lay...

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Published in:Applied physics letters 2010-08, Vol.97 (5), p.053305-053305-3
Main Authors: Zeng, Lichang, Tang, Ching W., Chen, Shaw H.
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cited_by cdi_FETCH-LOGICAL-c376t-acb98d59a3023fd0da2d4644d141595c4fe135e7288ecc187c094868132ae4973
cites cdi_FETCH-LOGICAL-c376t-acb98d59a3023fd0da2d4644d141595c4fe135e7288ecc187c094868132ae4973
container_end_page 053305-3
container_issue 5
container_start_page 053305
container_title Applied physics letters
container_volume 97
creator Zeng, Lichang
Tang, Ching W.
Chen, Shaw H.
description The effect of thermal annealing on photovoltaic devices comprising poly(3-hexylthiophene):[6,6]-phenyl C 61 butyric acid methyl ester (P3HT:PCBM) with thicknesses up to 1200 nm was investigated. Without thermal annealing, the efficiency of the as-prepared devices decreased with increasing active layer thickness, reflecting largely a reduction in the short-circuit current density and an inverse photocurrent spectral response. Thermal annealing of the full devices was found to substantially recover thick-film device efficiencies while reducing the thin-film device efficiencies. The profound variations in photovoltaic characteristics were interpreted in terms of vertical phase separation in the P3HT:PCBM blend film and Li + diffusion from the LiF/Al contact.
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fullrecord <record><control><sourceid>scitation_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_984847</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c376t-acb98d59a3023fd0da2d4644d141595c4fe135e7288ecc187c094868132ae4973</originalsourceid><addsrcrecordid>eNp1kEFLwzAYhoMoOKcH_0E8euhMmrRNPQgyNhUGXvQcsvSLzZY1o8kGA3-8Kd3V0_d-8PDC-yB0T8mMkpI90RnjFS8LfoEmlFRVxigVl2hCCGFZWRf0Gt2EsElvkTM2Qb8LY0DHgL3BSkd7BOzUCXocW6u3HYSAVdekD_qdcil3oJztfrDv8N67U8L8voUOnvHy4Bz0KeL1wW1xCxF6vzl0qXWAWx_90buorMYNHK2GcIuujHIB7s53ir6Xi6_5e7b6fPuYv64yzaoyZkqva9EUtWIkZ6YhjcobXnLeUE6LutDcAGUFVLkQoDUVlSY1F6WgLFfA64pN0cPY60O0MmgbQbfapy06ylpwwQfmcWR070Powch9b3eqP0lK5KBWUnlWm9iXkR2q1DDvf_jsV3ojR7_SKfYHkSKDCg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effects of active layer thickness and thermal annealing on polythiophene: Fullerene bulk heterojunction photovoltaic devices</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP_美国物理联合会现刊（与NSTL共建）</source><creator>Zeng, Lichang ; Tang, Ching W. ; Chen, Shaw H.</creator><creatorcontrib>Zeng, Lichang ; Tang, Ching W. ; Chen, Shaw H. ; Laboratory for Laser Energetics, University of Rochester</creatorcontrib><description>The effect of thermal annealing on photovoltaic devices comprising poly(3-hexylthiophene):[6,6]-phenyl C 61 butyric acid methyl ester (P3HT:PCBM) with thicknesses up to 1200 nm was investigated. Without thermal annealing, the efficiency of the as-prepared devices decreased with increasing active layer thickness, reflecting largely a reduction in the short-circuit current density and an inverse photocurrent spectral response. Thermal annealing of the full devices was found to substantially recover thick-film device efficiencies while reducing the thin-film device efficiencies. The profound variations in photovoltaic characteristics were interpreted in terms of vertical phase separation in the P3HT:PCBM blend film and Li + diffusion from the LiF/Al contact.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3474654</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-08, Vol.97 (5), p.053305-053305-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c376t-acb98d59a3023fd0da2d4644d141595c4fe135e7288ecc187c094868132ae4973</citedby><cites>FETCH-LOGICAL-c376t-acb98d59a3023fd0da2d4644d141595c4fe135e7288ecc187c094868132ae4973</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3474654$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,782,784,795,885,27924,27925,76255</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/984847$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zeng, Lichang</creatorcontrib><creatorcontrib>Tang, Ching W.</creatorcontrib><creatorcontrib>Chen, Shaw H.</creatorcontrib><creatorcontrib>Laboratory for Laser Energetics, University of Rochester</creatorcontrib><title>Effects of active layer thickness and thermal annealing on polythiophene: Fullerene bulk heterojunction photovoltaic devices</title><title>Applied physics letters</title><description>The effect of thermal annealing on photovoltaic devices comprising poly(3-hexylthiophene):[6,6]-phenyl C 61 butyric acid methyl ester (P3HT:PCBM) with thicknesses up to 1200 nm was investigated. Without thermal annealing, the efficiency of the as-prepared devices decreased with increasing active layer thickness, reflecting largely a reduction in the short-circuit current density and an inverse photocurrent spectral response. Thermal annealing of the full devices was found to substantially recover thick-film device efficiencies while reducing the thin-film device efficiencies. The profound variations in photovoltaic characteristics were interpreted in terms of vertical phase separation in the P3HT:PCBM blend film and Li + diffusion from the LiF/Al contact.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLwzAYhoMoOKcH_0E8euhMmrRNPQgyNhUGXvQcsvSLzZY1o8kGA3-8Kd3V0_d-8PDC-yB0T8mMkpI90RnjFS8LfoEmlFRVxigVl2hCCGFZWRf0Gt2EsElvkTM2Qb8LY0DHgL3BSkd7BOzUCXocW6u3HYSAVdekD_qdcil3oJztfrDv8N67U8L8voUOnvHy4Bz0KeL1wW1xCxF6vzl0qXWAWx_90buorMYNHK2GcIuujHIB7s53ir6Xi6_5e7b6fPuYv64yzaoyZkqva9EUtWIkZ6YhjcobXnLeUE6LutDcAGUFVLkQoDUVlSY1F6WgLFfA64pN0cPY60O0MmgbQbfapy06ylpwwQfmcWR070Powch9b3eqP0lK5KBWUnlWm9iXkR2q1DDvf_jsV3ojR7_SKfYHkSKDCg</recordid><startdate>20100802</startdate><enddate>20100802</enddate><creator>Zeng, Lichang</creator><creator>Tang, Ching W.</creator><creator>Chen, Shaw H.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20100802</creationdate><title>Effects of active layer thickness and thermal annealing on polythiophene: Fullerene bulk heterojunction photovoltaic devices</title><author>Zeng, Lichang ; Tang, Ching W. ; Chen, Shaw H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c376t-acb98d59a3023fd0da2d4644d141595c4fe135e7288ecc187c094868132ae4973</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zeng, Lichang</creatorcontrib><creatorcontrib>Tang, Ching W.</creatorcontrib><creatorcontrib>Chen, Shaw H.</creatorcontrib><creatorcontrib>Laboratory for Laser Energetics, University of Rochester</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zeng, Lichang</au><au>Tang, Ching W.</au><au>Chen, Shaw H.</au><aucorp>Laboratory for Laser Energetics, University of Rochester</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of active layer thickness and thermal annealing on polythiophene: Fullerene bulk heterojunction photovoltaic devices</atitle><jtitle>Applied physics letters</jtitle><date>2010-08-02</date><risdate>2010</risdate><volume>97</volume><issue>5</issue><spage>053305</spage><epage>053305-3</epage><pages>053305-053305-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The effect of thermal annealing on photovoltaic devices comprising poly(3-hexylthiophene):[6,6]-phenyl C 61 butyric acid methyl ester (P3HT:PCBM) with thicknesses up to 1200 nm was investigated. Without thermal annealing, the efficiency of the as-prepared devices decreased with increasing active layer thickness, reflecting largely a reduction in the short-circuit current density and an inverse photocurrent spectral response. Thermal annealing of the full devices was found to substantially recover thick-film device efficiencies while reducing the thin-film device efficiencies. The profound variations in photovoltaic characteristics were interpreted in terms of vertical phase separation in the P3HT:PCBM blend film and Li + diffusion from the LiF/Al contact.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3474654</doi></addata></record>
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title Effects of active layer thickness and thermal annealing on polythiophene: Fullerene bulk heterojunction photovoltaic devices
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T14%3A39%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effects%20of%20active%20layer%20thickness%20and%20thermal%20annealing%20on%20polythiophene:%20Fullerene%20bulk%20heterojunction%20photovoltaic%20devices&rft.jtitle=Applied%20physics%20letters&rft.au=Zeng,%20Lichang&rft.aucorp=Laboratory%20for%20Laser%20Energetics,%20University%20of%20Rochester&rft.date=2010-08-02&rft.volume=97&rft.issue=5&rft.spage=053305&rft.epage=053305-3&rft.pages=053305-053305-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3474654&rft_dat=%3Cscitation_osti_%3Eapl%3C/scitation_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c376t-acb98d59a3023fd0da2d4644d141595c4fe135e7288ecc187c094868132ae4973%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true