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Applying uniform reversible strain to epitaxial oxide films

We demonstrate using four-circle x-ray diffraction that the piezoelectric substrate of Pb ( Mg 1 / 3 Nb 2 / 3 ) 0.72 Ti 0.28 O 3 ( 001 ) induces uniform reversible in-plane strain to epitaxially-grown oxide films and bilayers. The biaxial in-plane strain depends linearly on the applied electrical vo...

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Bibliographic Details
Published in:Applied physics letters 2010-04, Vol.96 (15), p.151905-151905-3
Main Authors: Biegalski, M. D., Dörr, K., Kim, D. H., Christen, H. M.
Format: Article
Language:English
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Summary:We demonstrate using four-circle x-ray diffraction that the piezoelectric substrate of Pb ( Mg 1 / 3 Nb 2 / 3 ) 0.72 Ti 0.28 O 3 ( 001 ) induces uniform reversible in-plane strain to epitaxially-grown oxide films and bilayers. The biaxial in-plane strain depends linearly on the applied electrical voltage. Utilizing the reversible strain, the strain-dependent lattice structure and the Poisson number characterizing the elastic response is determined for 200 nm thick SrTiO 3 , LaScO 3 , and BiFeO 3 films. The uniformity and reversibility of the strain provides access to the direct quantitative measurement of strain-dependent properties of epitaxial oxide films.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3374323