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Applying uniform reversible strain to epitaxial oxide films
We demonstrate using four-circle x-ray diffraction that the piezoelectric substrate of Pb ( Mg 1 / 3 Nb 2 / 3 ) 0.72 Ti 0.28 O 3 ( 001 ) induces uniform reversible in-plane strain to epitaxially-grown oxide films and bilayers. The biaxial in-plane strain depends linearly on the applied electrical vo...
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Published in: | Applied physics letters 2010-04, Vol.96 (15), p.151905-151905-3 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We demonstrate using four-circle x-ray diffraction that the piezoelectric substrate of
Pb
(
Mg
1
/
3
Nb
2
/
3
)
0.72
Ti
0.28
O
3
(
001
)
induces
uniform
reversible in-plane strain to epitaxially-grown oxide films and bilayers. The biaxial in-plane strain depends linearly on the applied electrical voltage. Utilizing the reversible strain, the strain-dependent lattice structure and the Poisson number characterizing the elastic response is determined for 200 nm thick
SrTiO
3
,
LaScO
3
, and
BiFeO
3
films. The uniformity and reversibility of the strain provides access to the direct quantitative measurement of strain-dependent properties of epitaxial oxide films. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3374323 |