Characterization of initial one monolayer growth of Ge on si(1 0 0) and Si on Ge(1 0 0)

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Bibliographic Details
Main Authors: IKEDA, Keiji, YANASE, Jiro, SUGAHARA, Satoshi, UCHIDA, Yasutaka, MATSUMURA, Masakiyo
Format: Conference Proceeding
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vapor phase epitaxy
growth from vapor phase
Online Access:Get full text
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ISSN:0169-4332
1873-5584