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Behaviour of poly-Si1-xGex-gated MOS capacitors under different electrical stress conditions in the direct tunnelling regime

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Bibliographic Details
Published in:	Semiconductor science and technology 2001-06, Vol.16 (6), p.478-482
Main Authors:	Yousif, M Y A, Willander, M, Lundgren, P, Caymax, M
Format:	Article
Language:	English
Subjects:	Applied sciences Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology
Online Access:	Get full text
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